Highly gate-tuneable Rashba spin-orbit interaction in a gate-all-around InAs nanowire metal-oxide-semiconductor field-effect transistor

Abstract III-V semiconductors have been intensively studied with the goal of realizing metal-oxide-semiconductor field-effect transistors (MOSFETs) with high mobility, a high on-off ratio, and low power consumption as next-generation transistors designed to replace current Si technology. Of these se...

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Autores principales:	K. Takase, Y. Ashikawa, G. Zhang, K. Tateno, S. Sasaki
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/1fd69eb75883431d9d2c7a34d0216cae
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spelling	oai:doaj.org-article:1fd69eb75883431d9d2c7a34d0216cae2021-12-02T15:06:14ZHighly gate-tuneable Rashba spin-orbit interaction in a gate-all-around InAs nanowire metal-oxide-semiconductor field-effect transistor10.1038/s41598-017-01080-02045-2322https://doaj.org/article/1fd69eb75883431d9d2c7a34d0216cae2017-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-01080-0https://doaj.org/toc/2045-2322Abstract III-V semiconductors have been intensively studied with the goal of realizing metal-oxide-semiconductor field-effect transistors (MOSFETs) with high mobility, a high on-off ratio, and low power consumption as next-generation transistors designed to replace current Si technology. Of these semiconductors, a narrow band-gap semiconductor InAs has strong Rashba spin-orbit interaction, thus making it advantageous in terms of both high field-effect transistor (FET) performance and efficient spin control. Here we report a high-performance InAs nanowire MOSFET with a gate-all-around (GAA) structure, where we simultaneously control the spin precession using the Rashba interaction. Our FET has a high on-off ratio (104~106) and a high field-effect mobility (1200 cm2/Vs) and both values are comparable to those of previously reported nanowire FETs. Simultaneously, GAA geometry combined with high- κ dielectric enables the creation of a large and uniform coaxial electric field (>107 V/m), thereby achieving highly controllable Rashba coupling (1 × 10−11 eVm within a gate-voltage swing of 1 V), i.e. an operation voltage one order of magnitude smaller than those of back-gated nanowire MOSFETs. Our demonstration of high FET performance and spin controllability offers a new way of realizing low-power consumption nanoscale spin MOSFETs.K. TakaseY. AshikawaG. ZhangK. TatenoS. SasakiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q K. Takase Y. Ashikawa G. Zhang K. Tateno S. Sasaki Highly gate-tuneable Rashba spin-orbit interaction in a gate-all-around InAs nanowire metal-oxide-semiconductor field-effect transistor
description	Abstract III-V semiconductors have been intensively studied with the goal of realizing metal-oxide-semiconductor field-effect transistors (MOSFETs) with high mobility, a high on-off ratio, and low power consumption as next-generation transistors designed to replace current Si technology. Of these semiconductors, a narrow band-gap semiconductor InAs has strong Rashba spin-orbit interaction, thus making it advantageous in terms of both high field-effect transistor (FET) performance and efficient spin control. Here we report a high-performance InAs nanowire MOSFET with a gate-all-around (GAA) structure, where we simultaneously control the spin precession using the Rashba interaction. Our FET has a high on-off ratio (104~106) and a high field-effect mobility (1200 cm2/Vs) and both values are comparable to those of previously reported nanowire FETs. Simultaneously, GAA geometry combined with high- κ dielectric enables the creation of a large and uniform coaxial electric field (>107 V/m), thereby achieving highly controllable Rashba coupling (1 × 10−11 eVm within a gate-voltage swing of 1 V), i.e. an operation voltage one order of magnitude smaller than those of back-gated nanowire MOSFETs. Our demonstration of high FET performance and spin controllability offers a new way of realizing low-power consumption nanoscale spin MOSFETs.
format	article
author	K. Takase Y. Ashikawa G. Zhang K. Tateno S. Sasaki
author_facet	K. Takase Y. Ashikawa G. Zhang K. Tateno S. Sasaki
author_sort	K. Takase
title	Highly gate-tuneable Rashba spin-orbit interaction in a gate-all-around InAs nanowire metal-oxide-semiconductor field-effect transistor
title_short	Highly gate-tuneable Rashba spin-orbit interaction in a gate-all-around InAs nanowire metal-oxide-semiconductor field-effect transistor
title_full	Highly gate-tuneable Rashba spin-orbit interaction in a gate-all-around InAs nanowire metal-oxide-semiconductor field-effect transistor
title_fullStr	Highly gate-tuneable Rashba spin-orbit interaction in a gate-all-around InAs nanowire metal-oxide-semiconductor field-effect transistor
title_full_unstemmed	Highly gate-tuneable Rashba spin-orbit interaction in a gate-all-around InAs nanowire metal-oxide-semiconductor field-effect transistor
title_sort	highly gate-tuneable rashba spin-orbit interaction in a gate-all-around inas nanowire metal-oxide-semiconductor field-effect transistor
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/1fd69eb75883431d9d2c7a34d0216cae
work_keys_str_mv	AT ktakase highlygatetuneablerashbaspinorbitinteractioninagateallaroundinasnanowiremetaloxidesemiconductorfieldeffecttransistor AT yashikawa highlygatetuneablerashbaspinorbitinteractioninagateallaroundinasnanowiremetaloxidesemiconductorfieldeffecttransistor AT gzhang highlygatetuneablerashbaspinorbitinteractioninagateallaroundinasnanowiremetaloxidesemiconductorfieldeffecttransistor AT ktateno highlygatetuneablerashbaspinorbitinteractioninagateallaroundinasnanowiremetaloxidesemiconductorfieldeffecttransistor AT ssasaki highlygatetuneablerashbaspinorbitinteractioninagateallaroundinasnanowiremetaloxidesemiconductorfieldeffecttransistor
_version_	1718388499460128768

Highly gate-tuneable Rashba spin-orbit interaction in a gate-all-around InAs nanowire metal-oxide-semiconductor field-effect transistor

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