Investigation of structural and electronic properties of epitaxial graphene on 3C–SiC(100)/Si(100) substrates

Investigation of structural and electronic properties of epitaxial graphene on 3C–SiC(100)/Si(100) substrates

Noelle Gogneau,1 Amira Ben Gouider Trabelsi,2 Mathieu G Silly,3 Mohamed Ridene,1 Marc Portail,4 Adrien Michon,4 Mehrezi Oueslati,2 Rachid Belkhou,3 Fausto Sirotti,3 Abdelkarim Ouerghi1 1Laboratoire de Photonique et de Nanostructures, Centre National de la Recherche Scientifique, Marcoussis, France;...

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Autores principales: Gogneau N, Ben Gouider Trabelsi A, Silly MG, Ridene M, Portail M, Michon A, Oueslati M, Belkhou R, Sirotti F, Ouerghi A
Formato: article
Lenguaje:EN
Publicado: Dove Medical Press 2014
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Medical technology
R855-855.5
Chemical technology
TP1-1185
Acceso en línea:https://doaj.org/article/20cd2df68ab24fbf8815d3475bb9611b
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spelling oai:doaj.org-article:20cd2df68ab24fbf8815d3475bb9611b2021-12-02T01:20:53ZInvestigation of structural and electronic properties of epitaxial graphene on 3C–SiC(100)/Si(100) substrates1177-8903https://doaj.org/article/20cd2df68ab24fbf8815d3475bb9611b2014-09-01T00:00:00Zhttp://www.dovepress.com/investigation-of-structural-and-electronic-properties-of-epitaxial-gra-peer-reviewed-article-NSAhttps://doaj.org/toc/1177-8903 Noelle Gogneau,1 Amira Ben Gouider Trabelsi,2 Mathieu G Silly,3 Mohamed Ridene,1 Marc Portail,4 Adrien Michon,4 Mehrezi Oueslati,2 Rachid Belkhou,3 Fausto Sirotti,3 Abdelkarim Ouerghi1 1Laboratoire de Photonique et de Nanostructures, Centre National de la Recherche Scientifique, Marcoussis, France; 2Unité des Nanomatériaux et Photonique, Faculté des Sciences de Tunis, Université de Tunis El Manar Campus Universitaire, Tunis, Tunisia; 3Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France; 4Centre de Recherche sur l'HétéroEpitaxie et Ses Application, Centre National de la Recherche Scientifique, Valbonne, France Abstract: Graphene has been intensively studied in recent years in order to take advantage of its unique properties. Its synthesis on SiC substrates by solid-state graphitization appears a suitable option for graphene-based electronics. However, before developing devices based on epitaxial graphene, it is desirable to understand and finely control the synthesis of material with the most promising properties. To achieve these prerequisites, many studies are being conducted on various SiC substrates. Here, we review 3C–SiC(100) epilayers grown by chemical vapor deposition on Si(100) substrates for producing graphene by solid state graphitization under ultrahigh-vacuum conditions. Based on various characterization techniques, the structural and electrical properties of epitaxial graphene layer grown on 3C–SiC(100)/Si(100) are discussed. We establish that epitaxial graphene presents properties similar to those obtained using hexagonal SiC substrates, with the advantage of being compatible with current Si-processing technology. Keywords: epitaxial graphene, electronic properties, structural properties, silicon carbide Gogneau NBen Gouider Trabelsi ASilly MGRidene MPortail MMichon AOueslati MBelkhou RSirotti FOuerghi ADove Medical PressarticleMedical technologyR855-855.5Chemical technologyTP1-1185ENNanotechnology, Science and Applications, Vol 2014, Iss default, Pp 85-95 (2014)
institution DOAJ
collection DOAJ
language EN
topic Medical technology
R855-855.5
Chemical technology
TP1-1185
spellingShingle Medical technology
R855-855.5
Chemical technology
TP1-1185
Gogneau N
Ben Gouider Trabelsi A
Silly MG
Ridene M
Portail M
Michon A
Oueslati M
Belkhou R
Sirotti F
Ouerghi A
Investigation of structural and electronic properties of epitaxial graphene on 3C–SiC(100)/Si(100) substrates
description Noelle Gogneau,1 Amira Ben Gouider Trabelsi,2 Mathieu G Silly,3 Mohamed Ridene,1 Marc Portail,4 Adrien Michon,4 Mehrezi Oueslati,2 Rachid Belkhou,3 Fausto Sirotti,3 Abdelkarim Ouerghi1 1Laboratoire de Photonique et de Nanostructures, Centre National de la Recherche Scientifique, Marcoussis, France; 2Unité des Nanomatériaux et Photonique, Faculté des Sciences de Tunis, Université de Tunis El Manar Campus Universitaire, Tunis, Tunisia; 3Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France; 4Centre de Recherche sur l'HétéroEpitaxie et Ses Application, Centre National de la Recherche Scientifique, Valbonne, France Abstract: Graphene has been intensively studied in recent years in order to take advantage of its unique properties. Its synthesis on SiC substrates by solid-state graphitization appears a suitable option for graphene-based electronics. However, before developing devices based on epitaxial graphene, it is desirable to understand and finely control the synthesis of material with the most promising properties. To achieve these prerequisites, many studies are being conducted on various SiC substrates. Here, we review 3C–SiC(100) epilayers grown by chemical vapor deposition on Si(100) substrates for producing graphene by solid state graphitization under ultrahigh-vacuum conditions. Based on various characterization techniques, the structural and electrical properties of epitaxial graphene layer grown on 3C–SiC(100)/Si(100) are discussed. We establish that epitaxial graphene presents properties similar to those obtained using hexagonal SiC substrates, with the advantage of being compatible with current Si-processing technology. Keywords: epitaxial graphene, electronic properties, structural properties, silicon carbide 
format article
author Gogneau N
Ben Gouider Trabelsi A
Silly MG
Ridene M
Portail M
Michon A
Oueslati M
Belkhou R
Sirotti F
Ouerghi A
author_facet Gogneau N
Ben Gouider Trabelsi A
Silly MG
Ridene M
Portail M
Michon A
Oueslati M
Belkhou R
Sirotti F
Ouerghi A
author_sort Gogneau N
title Investigation of structural and electronic properties of epitaxial graphene on 3C–SiC(100)/Si(100) substrates
title_short Investigation of structural and electronic properties of epitaxial graphene on 3C–SiC(100)/Si(100) substrates
title_full Investigation of structural and electronic properties of epitaxial graphene on 3C–SiC(100)/Si(100) substrates
title_fullStr Investigation of structural and electronic properties of epitaxial graphene on 3C–SiC(100)/Si(100) substrates
title_full_unstemmed Investigation of structural and electronic properties of epitaxial graphene on 3C–SiC(100)/Si(100) substrates
title_sort investigation of structural and electronic properties of epitaxial graphene on 3c–sic(100)/si(100) substrates
publisher Dove Medical Press
publishDate 2014
url https://doaj.org/article/20cd2df68ab24fbf8815d3475bb9611b
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