Defects controlled hole doping and multivalley transport in SnSe single crystals

Defects controlled hole doping and multivalley transport in SnSe single crystals

Knowledge of the electronic structure of group-IV monochalcogenides is essential for their application in high-performance thermoelectric energy harvesting. Here, using photoemission spectroscopy, the authors reveal the impact of doping, and the anisotropic nature of the band structure of SnSe.

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Detalles Bibliográficos
Autores principales: Zhen Wang, Congcong Fan, Zhixuan Shen, Chenqiang Hua, Qifeng Hu, Feng Sheng, Yunhao Lu, Hanyan Fang, Zhizhan Qiu, Jiong Lu, Zhengtai Liu, Wanling Liu, Yaobo Huang, Zhu-An Xu, D. W. Shen, Yi Zheng
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
Materias:
Science
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Acceso en línea:https://doaj.org/article/20e97c13298e4fd793b053d8a60fd51b
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