Heterogeneous optoelectronic characteristics of Si micropillar arrays fabricated by metal-assisted chemical etching

Abstract Recent progress achieved in metal-assisted chemical etching (MACE) has enabled the production of high-quality micropillar arrays for various optoelectronic applications. Si micropillars produced by MACE often show a porous Si/SiO x shell on crystalline pillar cores introduced by local elect...

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Autores principales: Yang Qian, David J. Magginetti, Seokmin Jeon, Yohan Yoon, Tony L. Olsen, Maoji Wang, Jordan M. Gerton, Heayoung P. Yoon
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Publicado: Nature Portfolio 2020
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Acceso en línea:https://doaj.org/article/2114907b527a44e582b3d123598fc2fd
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spelling oai:doaj.org-article:2114907b527a44e582b3d123598fc2fd2021-12-02T18:51:13ZHeterogeneous optoelectronic characteristics of Si micropillar arrays fabricated by metal-assisted chemical etching10.1038/s41598-020-73445-x2045-2322https://doaj.org/article/2114907b527a44e582b3d123598fc2fd2020-10-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-73445-xhttps://doaj.org/toc/2045-2322Abstract Recent progress achieved in metal-assisted chemical etching (MACE) has enabled the production of high-quality micropillar arrays for various optoelectronic applications. Si micropillars produced by MACE often show a porous Si/SiO x shell on crystalline pillar cores introduced by local electrochemical reactions. In this paper, we report the distinct optoelectronic characteristics of the porous Si/SiO x shell correlated to their chemical compositions. Local photoluminescent (PL) images obtained with an immersion oil objective lens in confocal microscopy show a red emission peak (≈ 650 nm) along the perimeter of the pillars that is threefold stronger compared to their center. On the basis of our analysis, we find an unexpected PL increase (≈ 540 nm) at the oil/shell interface. We suggest that both PL enhancements are mainly attributed to the porous structures, a similar behavior observed in previous MACE studies. Surface potential maps simultaneously recorded with topography reveal a significantly high surface potential on the sidewalls of MACE-synthesized pillars (+ 0.5 V), which is restored to the level of planar Si control (− 0.5 V) after removing SiO x in hydrofluoric acid. These distinct optoelectronic characteristics of the Si/SiO x shell can be beneficial for various sensor architectures.Yang QianDavid J. MagginettiSeokmin JeonYohan YoonTony L. OlsenMaoji WangJordan M. GertonHeayoung P. YoonNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 10, Iss 1, Pp 1-10 (2020)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Yang Qian
David J. Magginetti
Seokmin Jeon
Yohan Yoon
Tony L. Olsen
Maoji Wang
Jordan M. Gerton
Heayoung P. Yoon
Heterogeneous optoelectronic characteristics of Si micropillar arrays fabricated by metal-assisted chemical etching
description Abstract Recent progress achieved in metal-assisted chemical etching (MACE) has enabled the production of high-quality micropillar arrays for various optoelectronic applications. Si micropillars produced by MACE often show a porous Si/SiO x shell on crystalline pillar cores introduced by local electrochemical reactions. In this paper, we report the distinct optoelectronic characteristics of the porous Si/SiO x shell correlated to their chemical compositions. Local photoluminescent (PL) images obtained with an immersion oil objective lens in confocal microscopy show a red emission peak (≈ 650 nm) along the perimeter of the pillars that is threefold stronger compared to their center. On the basis of our analysis, we find an unexpected PL increase (≈ 540 nm) at the oil/shell interface. We suggest that both PL enhancements are mainly attributed to the porous structures, a similar behavior observed in previous MACE studies. Surface potential maps simultaneously recorded with topography reveal a significantly high surface potential on the sidewalls of MACE-synthesized pillars (+ 0.5 V), which is restored to the level of planar Si control (− 0.5 V) after removing SiO x in hydrofluoric acid. These distinct optoelectronic characteristics of the Si/SiO x shell can be beneficial for various sensor architectures.
format article
author Yang Qian
David J. Magginetti
Seokmin Jeon
Yohan Yoon
Tony L. Olsen
Maoji Wang
Jordan M. Gerton
Heayoung P. Yoon
author_facet Yang Qian
David J. Magginetti
Seokmin Jeon
Yohan Yoon
Tony L. Olsen
Maoji Wang
Jordan M. Gerton
Heayoung P. Yoon
author_sort Yang Qian
title Heterogeneous optoelectronic characteristics of Si micropillar arrays fabricated by metal-assisted chemical etching
title_short Heterogeneous optoelectronic characteristics of Si micropillar arrays fabricated by metal-assisted chemical etching
title_full Heterogeneous optoelectronic characteristics of Si micropillar arrays fabricated by metal-assisted chemical etching
title_fullStr Heterogeneous optoelectronic characteristics of Si micropillar arrays fabricated by metal-assisted chemical etching
title_full_unstemmed Heterogeneous optoelectronic characteristics of Si micropillar arrays fabricated by metal-assisted chemical etching
title_sort heterogeneous optoelectronic characteristics of si micropillar arrays fabricated by metal-assisted chemical etching
publisher Nature Portfolio
publishDate 2020
url https://doaj.org/article/2114907b527a44e582b3d123598fc2fd
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