Particle tracking simulation of an air channel transistor

Advances in nanofabrication techniques have underpinned the recent growing interest in vacuum channel transistors due to their ability to showcase ballistic transport and immunity to most radiations. However, the geometry of the electrodes plays an important role in the overall performance and effic...

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Autores principales:	Mahta Monshipouri, Sumeet Walia, Madhu Bhaskaran, Sharath Sriram
Formato:	article
Lenguaje:	EN
Publicado:	AIP Publishing LLC 2021
Materias:	Physics QC1-999
Acceso en línea:	https://doaj.org/article/21346b00e1084fd2adab9b47a8bc2c20
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id	oai:doaj.org-article:21346b00e1084fd2adab9b47a8bc2c20
record_format	dspace
spelling	oai:doaj.org-article:21346b00e1084fd2adab9b47a8bc2c202021-12-01T18:52:06ZParticle tracking simulation of an air channel transistor2158-322610.1063/5.0064051https://doaj.org/article/21346b00e1084fd2adab9b47a8bc2c202021-11-01T00:00:00Zhttp://dx.doi.org/10.1063/5.0064051https://doaj.org/toc/2158-3226Advances in nanofabrication techniques have underpinned the recent growing interest in vacuum channel transistors due to their ability to showcase ballistic transport and immunity to most radiations. However, the geometry of the electrodes plays an important role in the overall performance and efficiency of the device. Several studies on the geometry of the source electrode have been carried out because of its role in enhancement of the local electric field, which triggers electron tunneling, yet the geometry of the drain electrode has been neglected. Here, we propose a new planar vacuum channel transistor with gold electrodes. Our study shows that the unique geometrical design of the device leads to high collection efficiency. Furthermore, it reveals the importance of the geometry of the drain on device performance. Emission characteristics of the device and the effect of geometrical parameters such as channel length and source geometry on its performance have also been investigated.Mahta MonshipouriSumeet WaliaMadhu BhaskaranSharath SriramAIP Publishing LLCarticlePhysicsQC1-999ENAIP Advances, Vol 11, Iss 11, Pp 115209-115209-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999
spellingShingle	Physics QC1-999 Mahta Monshipouri Sumeet Walia Madhu Bhaskaran Sharath Sriram Particle tracking simulation of an air channel transistor
description	Advances in nanofabrication techniques have underpinned the recent growing interest in vacuum channel transistors due to their ability to showcase ballistic transport and immunity to most radiations. However, the geometry of the electrodes plays an important role in the overall performance and efficiency of the device. Several studies on the geometry of the source electrode have been carried out because of its role in enhancement of the local electric field, which triggers electron tunneling, yet the geometry of the drain electrode has been neglected. Here, we propose a new planar vacuum channel transistor with gold electrodes. Our study shows that the unique geometrical design of the device leads to high collection efficiency. Furthermore, it reveals the importance of the geometry of the drain on device performance. Emission characteristics of the device and the effect of geometrical parameters such as channel length and source geometry on its performance have also been investigated.
format	article
author	Mahta Monshipouri Sumeet Walia Madhu Bhaskaran Sharath Sriram
author_facet	Mahta Monshipouri Sumeet Walia Madhu Bhaskaran Sharath Sriram
author_sort	Mahta Monshipouri
title	Particle tracking simulation of an air channel transistor
title_short	Particle tracking simulation of an air channel transistor
title_full	Particle tracking simulation of an air channel transistor
title_fullStr	Particle tracking simulation of an air channel transistor
title_full_unstemmed	Particle tracking simulation of an air channel transistor
title_sort	particle tracking simulation of an air channel transistor
publisher	AIP Publishing LLC
publishDate	2021
url	https://doaj.org/article/21346b00e1084fd2adab9b47a8bc2c20
work_keys_str_mv	AT mahtamonshipouri particletrackingsimulationofanairchanneltransistor AT sumeetwalia particletrackingsimulationofanairchanneltransistor AT madhubhaskaran particletrackingsimulationofanairchanneltransistor AT sharathsriram particletrackingsimulationofanairchanneltransistor
_version_	1718404679349567488

Particle tracking simulation of an air channel transistor

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