Laser gain spectra of quantum wells and multiplasmon optical transitions
A novel multi-plasmon concept of a light absorption and laser gain of low-dimensional structures are comprehensively discussed. A Generalized Semiconductor Bloch Equations are derived with account of multi-plasmon optical transitions in direct gap quantum wells, using the cumula...
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2005
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/21427e1d33d0407ba011467bdaeb7cd1 |
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| Sumario: | A novel multi-plasmon concept of a light absorption and laser gain of low-dimensional
structures are comprehensively discussed. A Generalized Semiconductor Bloch Equations are
derived with account of multi-plasmon optical transitions in direct gap quantum wells, using the
cumulant expansion method and fluctuation-dissipation theorem. We present results of computer
simulations concerning gain spectra of In0.05Ga0.95As quantum wells with account of multi-
plasmon optical transitions in two- dimensional systems.
Multi-quantum LO-phonon-plasmon optical transitions are investigated with account of
coherent memory effects in quantum wells. It is shown that a red shift of the absorption edge can
be caused, not only by known mechanism of band gap shrinkage, but also by multi-plasmon
transitions. The electron-hole plasma properties in the active region of the laser device and its
interaction with the optical field are studied on a microscopic level using obtained Generalized
Semiconductor Bloch Equations.
The comparison with other theories and experimental data measured in In0.05Ga0.95As
quantum wells is performed. The gain value g=50 cm-1
in 8 nm In 0.05Ga 0.95As quantum wells is
obtained at a surface density of electrons nd0=1.64 10-12
cm-2
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