Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate

Abstract In this work, fully transparent high performance double-channel indium-tin-oxide/Al–Sn–Zn–O thin-film transistors (ITO/ATZO TFTs) are successfully fabricated on glass by radio frequency (RF) magnetron sputtering. The ITO layer acts as the bottom channel layer to increase the channel carrier...

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Auteurs principaux:	Yingying Cong, Dedong Han, Junchen Dong, Shengdong Zhang, Xing Zhang, Yi Wang
Format:	article
Langue:	EN
Publié:	Nature Portfolio 2017
Sujets:	Medicine R Science Q
Accès en ligne:	https://doaj.org/article/21ba9d2dccb940cdbc9ab7c0bc98475c
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spelling	oai:doaj.org-article:21ba9d2dccb940cdbc9ab7c0bc98475c2021-12-02T11:41:00ZFully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate10.1038/s41598-017-01691-72045-2322https://doaj.org/article/21ba9d2dccb940cdbc9ab7c0bc98475c2017-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-01691-7https://doaj.org/toc/2045-2322Abstract In this work, fully transparent high performance double-channel indium-tin-oxide/Al–Sn–Zn–O thin-film transistors (ITO/ATZO TFTs) are successfully fabricated on glass by radio frequency (RF) magnetron sputtering. The ITO layer acts as the bottom channel layer to increase the channel carrier concentration. The top ATZO channel layer, which is deposited via high oxygen partial pressure in the sputtering process, is useful to control the minimum off-state current. After annealing, the ITO/ATZO TFT demonstrates outstanding electrical performances, including a high ON/OFF current ratio (Ion/Ioff) of 3.5 × 108, a steep threshold swing (SS) of 142.2 mV/decade, a superior saturation mobility (μsat) of 246.0 cm2/Vs, and a threshold voltage VT of 0.5 V. The operation mechanisms for double-channel structures are also clarified.Yingying CongDedong HanJunchen DongShengdong ZhangXing ZhangYi WangNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-6 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Yingying Cong Dedong Han Junchen Dong Shengdong Zhang Xing Zhang Yi Wang Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate
description	Abstract In this work, fully transparent high performance double-channel indium-tin-oxide/Al–Sn–Zn–O thin-film transistors (ITO/ATZO TFTs) are successfully fabricated on glass by radio frequency (RF) magnetron sputtering. The ITO layer acts as the bottom channel layer to increase the channel carrier concentration. The top ATZO channel layer, which is deposited via high oxygen partial pressure in the sputtering process, is useful to control the minimum off-state current. After annealing, the ITO/ATZO TFT demonstrates outstanding electrical performances, including a high ON/OFF current ratio (Ion/Ioff) of 3.5 × 108, a steep threshold swing (SS) of 142.2 mV/decade, a superior saturation mobility (μsat) of 246.0 cm2/Vs, and a threshold voltage VT of 0.5 V. The operation mechanisms for double-channel structures are also clarified.
format	article
author	Yingying Cong Dedong Han Junchen Dong Shengdong Zhang Xing Zhang Yi Wang
author_facet	Yingying Cong Dedong Han Junchen Dong Shengdong Zhang Xing Zhang Yi Wang
author_sort	Yingying Cong
title	Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate
title_short	Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate
title_full	Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate
title_fullStr	Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate
title_full_unstemmed	Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate
title_sort	fully transparent high performance thin film transistors with bilayer ito/al-sn-zn-o channel structures fabricated on glass substrate
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/21ba9d2dccb940cdbc9ab7c0bc98475c
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Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate

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