Controlling metal–insulator transitions in reactively sputtered vanadium sesquioxide thin films through structure and stoichiometry

Abstract We present a study of $$\hbox {V}_{2}\hbox {O}_{3}$$ V 2 O 3 thin films grown on c-plane $$\hbox {Al}_{2}\hbox {O}_{3}$$ Al 2 O 3 substrates by reactive dc-magnetron sputtering. Our results reveal three distinct types of films displaying different metal–insulator transitions dependent on th...

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Autores principales:	Einar B. Thorsteinsson, Seyedmohammad Shayestehaminzadeh, Arni S. Ingason, Fridrik Magnus, Unnar B. Arnalds
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/21dae9c769ee4398b08ae941fffd0357
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spelling	oai:doaj.org-article:21dae9c769ee4398b08ae941fffd03572021-12-02T16:31:17ZControlling metal–insulator transitions in reactively sputtered vanadium sesquioxide thin films through structure and stoichiometry10.1038/s41598-021-85397-x2045-2322https://doaj.org/article/21dae9c769ee4398b08ae941fffd03572021-03-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-85397-xhttps://doaj.org/toc/2045-2322Abstract We present a study of $$\hbox {V}_{2}\hbox {O}_{3}$$ V 2 O 3 thin films grown on c-plane $$\hbox {Al}_{2}\hbox {O}_{3}$$ Al 2 O 3 substrates by reactive dc-magnetron sputtering. Our results reveal three distinct types of films displaying different metal–insulator transitions dependent on the growth conditions. We observe a clear temperature window, spanning 200 $$^{\circ }$$ ∘ C, where highly epitaxial films of $$\hbox {V}_{2}\hbox {O}_{3}$$ V 2 O 3 can be obtained wherein the transition can be tuned by controlling the amount of interstitial oxygen in the films through the deposition conditions. Although small structural variations are observed within this window, large differences are observed in the electrical properties of the films with strong differences in the magnitude and temperature of the metal–insulator transition which we attribute to small changes in the stoichiometry and local strain in the films. Altering the sputtering power we are able to tune the characteristics of the metal–insulator transition suppressing and shifting the transition to lower temperatures as the power is reduced. Combined results for all the films fabricated for the study show a preferential increase in the a lattice parameter and reduction in the c lattice parameter with reduced deposition temperature with the film deviating from a constant volume unit cell to a higher volume.Einar B. ThorsteinssonSeyedmohammad ShayestehaminzadehArni S. IngasonFridrik MagnusUnnar B. ArnaldsNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Einar B. Thorsteinsson Seyedmohammad Shayestehaminzadeh Arni S. Ingason Fridrik Magnus Unnar B. Arnalds Controlling metal–insulator transitions in reactively sputtered vanadium sesquioxide thin films through structure and stoichiometry
description	Abstract We present a study of $$\hbox {V}_{2}\hbox {O}_{3}$$ V 2 O 3 thin films grown on c-plane $$\hbox {Al}_{2}\hbox {O}_{3}$$ Al 2 O 3 substrates by reactive dc-magnetron sputtering. Our results reveal three distinct types of films displaying different metal–insulator transitions dependent on the growth conditions. We observe a clear temperature window, spanning 200 $$^{\circ }$$ ∘ C, where highly epitaxial films of $$\hbox {V}_{2}\hbox {O}_{3}$$ V 2 O 3 can be obtained wherein the transition can be tuned by controlling the amount of interstitial oxygen in the films through the deposition conditions. Although small structural variations are observed within this window, large differences are observed in the electrical properties of the films with strong differences in the magnitude and temperature of the metal–insulator transition which we attribute to small changes in the stoichiometry and local strain in the films. Altering the sputtering power we are able to tune the characteristics of the metal–insulator transition suppressing and shifting the transition to lower temperatures as the power is reduced. Combined results for all the films fabricated for the study show a preferential increase in the a lattice parameter and reduction in the c lattice parameter with reduced deposition temperature with the film deviating from a constant volume unit cell to a higher volume.
format	article
author	Einar B. Thorsteinsson Seyedmohammad Shayestehaminzadeh Arni S. Ingason Fridrik Magnus Unnar B. Arnalds
author_facet	Einar B. Thorsteinsson Seyedmohammad Shayestehaminzadeh Arni S. Ingason Fridrik Magnus Unnar B. Arnalds
author_sort	Einar B. Thorsteinsson
title	Controlling metal–insulator transitions in reactively sputtered vanadium sesquioxide thin films through structure and stoichiometry
title_short	Controlling metal–insulator transitions in reactively sputtered vanadium sesquioxide thin films through structure and stoichiometry
title_full	Controlling metal–insulator transitions in reactively sputtered vanadium sesquioxide thin films through structure and stoichiometry
title_fullStr	Controlling metal–insulator transitions in reactively sputtered vanadium sesquioxide thin films through structure and stoichiometry
title_full_unstemmed	Controlling metal–insulator transitions in reactively sputtered vanadium sesquioxide thin films through structure and stoichiometry
title_sort	controlling metal–insulator transitions in reactively sputtered vanadium sesquioxide thin films through structure and stoichiometry
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/21dae9c769ee4398b08ae941fffd0357
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Controlling metal–insulator transitions in reactively sputtered vanadium sesquioxide thin films through structure and stoichiometry

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