Controlling metal–insulator transitions in reactively sputtered vanadium sesquioxide thin films through structure and stoichiometry
Abstract We present a study of $$\hbox {V}_{2}\hbox {O}_{3}$$ V 2 O 3 thin films grown on c-plane $$\hbox {Al}_{2}\hbox {O}_{3}$$ Al 2 O 3 substrates by reactive dc-magnetron sputtering. Our results reveal three distinct types of films displaying different metal–insulator transitions dependent on th...
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| Autores principales: | , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/21dae9c769ee4398b08ae941fffd0357 |
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