Optoelectronic synapse using monolayer MoS2 field effect transistors

Abstract Optical data sensing, processing and visual memory are fundamental requirements for artificial intelligence and robotics with autonomous navigation. Traditionally, imaging has been kept separate from the pattern recognition circuitry. Optoelectronic synapses hold the special potential of in...

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Autores principales:	Molla Manjurul Islam, Durjoy Dev, Adithi Krishnaprasad, Laurene Tetard, Tania Roy
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/21f58d74b44d45538e05c92762b013e7
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spelling	oai:doaj.org-article:21f58d74b44d45538e05c92762b013e72021-12-02T11:57:58ZOptoelectronic synapse using monolayer MoS2 field effect transistors10.1038/s41598-020-78767-42045-2322https://doaj.org/article/21f58d74b44d45538e05c92762b013e72020-12-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-78767-4https://doaj.org/toc/2045-2322Abstract Optical data sensing, processing and visual memory are fundamental requirements for artificial intelligence and robotics with autonomous navigation. Traditionally, imaging has been kept separate from the pattern recognition circuitry. Optoelectronic synapses hold the special potential of integrating these two fields into a single layer, where a single device can record optical data, convert it into a conductance state and store it for learning and pattern recognition, similar to the optic nerve in human eye. In this work, the trapping and de-trapping of photogenerated carriers in the MoS2/SiO2 interface of a n-channel MoS2 transistor was employed to emulate the optoelectronic synapse characteristics. The monolayer MoS2 field effect transistor (FET) exhibits photo-induced short-term and long-term potentiation, electrically driven long-term depression, paired pulse facilitation (PPF), spike time dependent plasticity, which are necessary synaptic characteristics. Moreover, the device’s ability to retain its conductance state can be modulated by the gate voltage, making the device behave as a photodetector for positive gate voltages and an optoelectronic synapse at negative gate voltages.Molla Manjurul IslamDurjoy DevAdithi KrishnaprasadLaurene TetardTania RoyNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Molla Manjurul Islam Durjoy Dev Adithi Krishnaprasad Laurene Tetard Tania Roy Optoelectronic synapse using monolayer MoS2 field effect transistors
description	Abstract Optical data sensing, processing and visual memory are fundamental requirements for artificial intelligence and robotics with autonomous navigation. Traditionally, imaging has been kept separate from the pattern recognition circuitry. Optoelectronic synapses hold the special potential of integrating these two fields into a single layer, where a single device can record optical data, convert it into a conductance state and store it for learning and pattern recognition, similar to the optic nerve in human eye. In this work, the trapping and de-trapping of photogenerated carriers in the MoS2/SiO2 interface of a n-channel MoS2 transistor was employed to emulate the optoelectronic synapse characteristics. The monolayer MoS2 field effect transistor (FET) exhibits photo-induced short-term and long-term potentiation, electrically driven long-term depression, paired pulse facilitation (PPF), spike time dependent plasticity, which are necessary synaptic characteristics. Moreover, the device’s ability to retain its conductance state can be modulated by the gate voltage, making the device behave as a photodetector for positive gate voltages and an optoelectronic synapse at negative gate voltages.
format	article
author	Molla Manjurul Islam Durjoy Dev Adithi Krishnaprasad Laurene Tetard Tania Roy
author_facet	Molla Manjurul Islam Durjoy Dev Adithi Krishnaprasad Laurene Tetard Tania Roy
author_sort	Molla Manjurul Islam
title	Optoelectronic synapse using monolayer MoS2 field effect transistors
title_short	Optoelectronic synapse using monolayer MoS2 field effect transistors
title_full	Optoelectronic synapse using monolayer MoS2 field effect transistors
title_fullStr	Optoelectronic synapse using monolayer MoS2 field effect transistors
title_full_unstemmed	Optoelectronic synapse using monolayer MoS2 field effect transistors
title_sort	optoelectronic synapse using monolayer mos2 field effect transistors
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/21f58d74b44d45538e05c92762b013e7
work_keys_str_mv	AT mollamanjurulislam optoelectronicsynapseusingmonolayermos2fieldeffecttransistors AT durjoydev optoelectronicsynapseusingmonolayermos2fieldeffecttransistors AT adithikrishnaprasad optoelectronicsynapseusingmonolayermos2fieldeffecttransistors AT laurenetetard optoelectronicsynapseusingmonolayermos2fieldeffecttransistors AT taniaroy optoelectronicsynapseusingmonolayermos2fieldeffecttransistors
_version_	1718394736445751296

Optoelectronic synapse using monolayer MoS2 field effect transistors

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