Electro-absorption modulation in GeSn alloys for wide-spectrum mid-infrared applications
Silicon-based electronic-photonic integrated circuits are promising for various applications, but their mid-infrared optical modulation is elusive. Here, tunable mid-infrared electro-absorption modulation, with broadband operation range >140 nm, is achieved in GeSn alloys on Si by controlling the...
Guardado en:
Autores principales: | , , , , , |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2021
|
Materias: | |
Acceso en línea: | https://doaj.org/article/221f4e9b0d6041c4a3a8bb4c2a19cca3 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Sumario: | Silicon-based electronic-photonic integrated circuits are promising for various applications, but their mid-infrared optical modulation is elusive. Here, tunable mid-infrared electro-absorption modulation, with broadband operation range >140 nm, is achieved in GeSn alloys on Si by controlling the Sn content. |
---|