Electro-absorption modulation in GeSn alloys for wide-spectrum mid-infrared applications

Silicon-based electronic-photonic integrated circuits are promising for various applications, but their mid-infrared optical modulation is elusive. Here, tunable mid-infrared electro-absorption modulation, with broadband operation range >140 nm, is achieved in GeSn alloys on Si by controlling the...

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Autores principales: Yun-Da Hsieh, Jun-Han Lin, Richard Soref, Greg Sun, Hung-Hsiang Cheng, Guo-En Chang
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Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/221f4e9b0d6041c4a3a8bb4c2a19cca3
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spelling oai:doaj.org-article:221f4e9b0d6041c4a3a8bb4c2a19cca32021-12-02T14:21:20ZElectro-absorption modulation in GeSn alloys for wide-spectrum mid-infrared applications10.1038/s43246-021-00144-z2662-4443https://doaj.org/article/221f4e9b0d6041c4a3a8bb4c2a19cca32021-04-01T00:00:00Zhttps://doi.org/10.1038/s43246-021-00144-zhttps://doaj.org/toc/2662-4443Silicon-based electronic-photonic integrated circuits are promising for various applications, but their mid-infrared optical modulation is elusive. Here, tunable mid-infrared electro-absorption modulation, with broadband operation range >140 nm, is achieved in GeSn alloys on Si by controlling the Sn content.Yun-Da HsiehJun-Han LinRichard SorefGreg SunHung-Hsiang ChengGuo-En ChangNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ENCommunications Materials, Vol 2, Iss 1, Pp 1-8 (2021)
institution DOAJ
collection DOAJ
language EN
topic Materials of engineering and construction. Mechanics of materials
TA401-492
spellingShingle Materials of engineering and construction. Mechanics of materials
TA401-492
Yun-Da Hsieh
Jun-Han Lin
Richard Soref
Greg Sun
Hung-Hsiang Cheng
Guo-En Chang
Electro-absorption modulation in GeSn alloys for wide-spectrum mid-infrared applications
description Silicon-based electronic-photonic integrated circuits are promising for various applications, but their mid-infrared optical modulation is elusive. Here, tunable mid-infrared electro-absorption modulation, with broadband operation range >140 nm, is achieved in GeSn alloys on Si by controlling the Sn content.
format article
author Yun-Da Hsieh
Jun-Han Lin
Richard Soref
Greg Sun
Hung-Hsiang Cheng
Guo-En Chang
author_facet Yun-Da Hsieh
Jun-Han Lin
Richard Soref
Greg Sun
Hung-Hsiang Cheng
Guo-En Chang
author_sort Yun-Da Hsieh
title Electro-absorption modulation in GeSn alloys for wide-spectrum mid-infrared applications
title_short Electro-absorption modulation in GeSn alloys for wide-spectrum mid-infrared applications
title_full Electro-absorption modulation in GeSn alloys for wide-spectrum mid-infrared applications
title_fullStr Electro-absorption modulation in GeSn alloys for wide-spectrum mid-infrared applications
title_full_unstemmed Electro-absorption modulation in GeSn alloys for wide-spectrum mid-infrared applications
title_sort electro-absorption modulation in gesn alloys for wide-spectrum mid-infrared applications
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/221f4e9b0d6041c4a3a8bb4c2a19cca3
work_keys_str_mv AT yundahsieh electroabsorptionmodulationingesnalloysforwidespectrummidinfraredapplications
AT junhanlin electroabsorptionmodulationingesnalloysforwidespectrummidinfraredapplications
AT richardsoref electroabsorptionmodulationingesnalloysforwidespectrummidinfraredapplications
AT gregsun electroabsorptionmodulationingesnalloysforwidespectrummidinfraredapplications
AT hunghsiangcheng electroabsorptionmodulationingesnalloysforwidespectrummidinfraredapplications
AT guoenchang electroabsorptionmodulationingesnalloysforwidespectrummidinfraredapplications
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