Impact of defects on the structural and electrical transport properties of Sb2Te3 thin films by SHI irradiation

Implantation of defects is an attractive trend for the modification of important properties of thin films for practical applications. In the present attempt, an effective approach for tuning the native defects in thin films is reported. The films were sequentially irradiated at five different fluenc...

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Autores principales:	Jyoti Yadav, Rini Singh, M.D. Anoop, Nisha Yadav, N. Srinivasa Rao, Fouran Singh, Kamlendra Awasthi, Manoj Kumar
Formato:	article
Lenguaje:	EN
Publicado:	Elsevier 2021
Materias:	Thin films Defects Semiconductors Materials of engineering and construction. Mechanics of materials TA401-492
Acceso en línea:	https://doaj.org/article/224cbe9d39ed455cb1efafbd1f18f221
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spelling	oai:doaj.org-article:224cbe9d39ed455cb1efafbd1f18f2212021-12-04T04:35:48ZImpact of defects on the structural and electrical transport properties of Sb2Te3 thin films by SHI irradiation2590-150810.1016/j.mlblux.2021.100113https://doaj.org/article/224cbe9d39ed455cb1efafbd1f18f2212021-12-01T00:00:00Zhttp://www.sciencedirect.com/science/article/pii/S2590150821000545https://doaj.org/toc/2590-1508Implantation of defects is an attractive trend for the modification of important properties of thin films for practical applications. In the present attempt, an effective approach for tuning the native defects in thin films is reported. The films were sequentially irradiated at five different fluences (5 × 1011, 1 × 1012, 3 × 1012, 5 × 1012, and 1 × 1013 ions/cm2). The key role of high-energy Ni ion irradiation-induced native defects was observed by the modifications in the physical properties of samples. However, irradiation induces a structural phase transition through strain. The average crystallite size as determined from X-ray diffraction (XRD) peak broadening was found to be 19.3 ± 5 (nm). A monotonic increase in the lattice strain was observed up to a fluence of 5 × 1012 ions/cm2. The resistivity v/s temperature measurements revealed an increase in resistivity up to the fluence 3 × 1012 ions/cm2 indicating an increase in grain boundaries effect. Our findings provide an insight into the correlation of tuned properties with the defects induced by irradiation and also a route to have the defects in a precise and controlled way.Jyoti YadavRini SinghM.D. AnoopNisha YadavN. Srinivasa RaoFouran SinghKamlendra AwasthiManoj KumarElsevierarticleThin filmsDefectsSemiconductorsMaterials of engineering and construction. Mechanics of materialsTA401-492ENMaterials Letters: X, Vol 12, Iss , Pp 100113- (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Thin films Defects Semiconductors Materials of engineering and construction. Mechanics of materials TA401-492
spellingShingle	Thin films Defects Semiconductors Materials of engineering and construction. Mechanics of materials TA401-492 Jyoti Yadav Rini Singh M.D. Anoop Nisha Yadav N. Srinivasa Rao Fouran Singh Kamlendra Awasthi Manoj Kumar Impact of defects on the structural and electrical transport properties of Sb2Te3 thin films by SHI irradiation
description	Implantation of defects is an attractive trend for the modification of important properties of thin films for practical applications. In the present attempt, an effective approach for tuning the native defects in thin films is reported. The films were sequentially irradiated at five different fluences (5 × 1011, 1 × 1012, 3 × 1012, 5 × 1012, and 1 × 1013 ions/cm2). The key role of high-energy Ni ion irradiation-induced native defects was observed by the modifications in the physical properties of samples. However, irradiation induces a structural phase transition through strain. The average crystallite size as determined from X-ray diffraction (XRD) peak broadening was found to be 19.3 ± 5 (nm). A monotonic increase in the lattice strain was observed up to a fluence of 5 × 1012 ions/cm2. The resistivity v/s temperature measurements revealed an increase in resistivity up to the fluence 3 × 1012 ions/cm2 indicating an increase in grain boundaries effect. Our findings provide an insight into the correlation of tuned properties with the defects induced by irradiation and also a route to have the defects in a precise and controlled way.
format	article
author	Jyoti Yadav Rini Singh M.D. Anoop Nisha Yadav N. Srinivasa Rao Fouran Singh Kamlendra Awasthi Manoj Kumar
author_facet	Jyoti Yadav Rini Singh M.D. Anoop Nisha Yadav N. Srinivasa Rao Fouran Singh Kamlendra Awasthi Manoj Kumar
author_sort	Jyoti Yadav
title	Impact of defects on the structural and electrical transport properties of Sb2Te3 thin films by SHI irradiation
title_short	Impact of defects on the structural and electrical transport properties of Sb2Te3 thin films by SHI irradiation
title_full	Impact of defects on the structural and electrical transport properties of Sb2Te3 thin films by SHI irradiation
title_fullStr	Impact of defects on the structural and electrical transport properties of Sb2Te3 thin films by SHI irradiation
title_full_unstemmed	Impact of defects on the structural and electrical transport properties of Sb2Te3 thin films by SHI irradiation
title_sort	impact of defects on the structural and electrical transport properties of sb2te3 thin films by shi irradiation
publisher	Elsevier
publishDate	2021
url	https://doaj.org/article/224cbe9d39ed455cb1efafbd1f18f221
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Impact of defects on the structural and electrical transport properties of Sb2Te3 thin films by SHI irradiation

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