Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio

Traditional non-volatile memories suffer from poor scalability in the vertical direction due to the use of a bulky oxide layer. Here, the authors develop a tunnelling random access memory using a vertical heterostructure composed of atomically thin molybdenum disulfide, boron nitride and graphene.

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Autores principales:	Quoc An Vu, Yong Seon Shin, Young Rae Kim, Van Luan Nguyen, Won Tae Kang, Hyun Kim, Dinh Hoa Luong, Il Min Lee, Kiyoung Lee, Dong-Su Ko, Jinseong Heo, Seongjun Park, Young Hee Lee, Woo Jong Yu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2016
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/228e09379679498e976be30f4043dfb4
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id	oai:doaj.org-article:228e09379679498e976be30f4043dfb4
record_format	dspace
spelling	oai:doaj.org-article:228e09379679498e976be30f4043dfb42021-12-02T17:33:09ZTwo-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio10.1038/ncomms127252041-1723https://doaj.org/article/228e09379679498e976be30f4043dfb42016-09-01T00:00:00Zhttps://doi.org/10.1038/ncomms12725https://doaj.org/toc/2041-1723Traditional non-volatile memories suffer from poor scalability in the vertical direction due to the use of a bulky oxide layer. Here, the authors develop a tunnelling random access memory using a vertical heterostructure composed of atomically thin molybdenum disulfide, boron nitride and graphene.Quoc An VuYong Seon ShinYoung Rae KimVan Luan NguyenWon Tae KangHyun KimDinh Hoa LuongIl Min LeeKiyoung LeeDong-Su KoJinseong HeoSeongjun ParkYoung Hee LeeWoo Jong YuNature PortfolioarticleScienceQENNature Communications, Vol 7, Iss 1, Pp 1-8 (2016)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Quoc An Vu Yong Seon Shin Young Rae Kim Van Luan Nguyen Won Tae Kang Hyun Kim Dinh Hoa Luong Il Min Lee Kiyoung Lee Dong-Su Ko Jinseong Heo Seongjun Park Young Hee Lee Woo Jong Yu Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio
description	Traditional non-volatile memories suffer from poor scalability in the vertical direction due to the use of a bulky oxide layer. Here, the authors develop a tunnelling random access memory using a vertical heterostructure composed of atomically thin molybdenum disulfide, boron nitride and graphene.
format	article
author	Quoc An Vu Yong Seon Shin Young Rae Kim Van Luan Nguyen Won Tae Kang Hyun Kim Dinh Hoa Luong Il Min Lee Kiyoung Lee Dong-Su Ko Jinseong Heo Seongjun Park Young Hee Lee Woo Jong Yu
author_facet	Quoc An Vu Yong Seon Shin Young Rae Kim Van Luan Nguyen Won Tae Kang Hyun Kim Dinh Hoa Luong Il Min Lee Kiyoung Lee Dong-Su Ko Jinseong Heo Seongjun Park Young Hee Lee Woo Jong Yu
author_sort	Quoc An Vu
title	Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio
title_short	Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio
title_full	Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio
title_fullStr	Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio
title_full_unstemmed	Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio
title_sort	two-terminal floating-gate memory with van der waals heterostructures for ultrahigh on/off ratio
publisher	Nature Portfolio
publishDate	2016
url	https://doaj.org/article/228e09379679498e976be30f4043dfb4
work_keys_str_mv	AT quocanvu twoterminalfloatinggatememorywithvanderwaalsheterostructuresforultrahighonoffratio AT yongseonshin twoterminalfloatinggatememorywithvanderwaalsheterostructuresforultrahighonoffratio AT youngraekim twoterminalfloatinggatememorywithvanderwaalsheterostructuresforultrahighonoffratio AT vanluannguyen twoterminalfloatinggatememorywithvanderwaalsheterostructuresforultrahighonoffratio AT wontaekang twoterminalfloatinggatememorywithvanderwaalsheterostructuresforultrahighonoffratio AT hyunkim twoterminalfloatinggatememorywithvanderwaalsheterostructuresforultrahighonoffratio AT dinhhoaluong twoterminalfloatinggatememorywithvanderwaalsheterostructuresforultrahighonoffratio AT ilminlee twoterminalfloatinggatememorywithvanderwaalsheterostructuresforultrahighonoffratio AT kiyounglee twoterminalfloatinggatememorywithvanderwaalsheterostructuresforultrahighonoffratio AT dongsuko twoterminalfloatinggatememorywithvanderwaalsheterostructuresforultrahighonoffratio AT jinseongheo twoterminalfloatinggatememorywithvanderwaalsheterostructuresforultrahighonoffratio AT seongjunpark twoterminalfloatinggatememorywithvanderwaalsheterostructuresforultrahighonoffratio AT youngheelee twoterminalfloatinggatememorywithvanderwaalsheterostructuresforultrahighonoffratio AT woojongyu twoterminalfloatinggatememorywithvanderwaalsheterostructuresforultrahighonoffratio
_version_	1718380050781306880

Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio

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