Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio
Traditional non-volatile memories suffer from poor scalability in the vertical direction due to the use of a bulky oxide layer. Here, the authors develop a tunnelling random access memory using a vertical heterostructure composed of atomically thin molybdenum disulfide, boron nitride and graphene.
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| Autores principales: | , , , , , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2016
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/228e09379679498e976be30f4043dfb4 |
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