Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio
Traditional non-volatile memories suffer from poor scalability in the vertical direction due to the use of a bulky oxide layer. Here, the authors develop a tunnelling random access memory using a vertical heterostructure composed of atomically thin molybdenum disulfide, boron nitride and graphene.
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| Auteurs principaux: | , , , , , , , , , , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2016
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/228e09379679498e976be30f4043dfb4 |
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