Phonon transport in amorphous silicon nanowires

Among the perspective research directions in modern physics, an important role is played by the investigation of amorphous nanostructures [1-3]. The effect of the drop in lattice thermal conductivity in these compounds can be used in thermoelectric applications [4, 5]. It is difficult both theoretic...

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Autor principal:	Crîşmari, Dumitru
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2012
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/23001895defc474e9b7f7d838ad79ba3
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id	oai:doaj.org-article:23001895defc474e9b7f7d838ad79ba3
record_format	dspace
spelling	oai:doaj.org-article:23001895defc474e9b7f7d838ad79ba32021-11-21T12:00:57ZPhonon transport in amorphous silicon nanowires2537-63651810-648Xhttps://doaj.org/article/23001895defc474e9b7f7d838ad79ba32012-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2012/article/22426https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Among the perspective research directions in modern physics, an important role is played by the investigation of amorphous nanostructures [1-3]. The effect of the drop in lattice thermal conductivity in these compounds can be used in thermoelectric applications [4, 5]. It is difficult both theoretically and practically to make in fact a distinction between truly amorphous solids and crystalline solids if the crystal sizes are very small [6]. Even amorphous materials have a certain short-range order at the atomic length scale due to the nature of chemical bonding. Furthermore, in very small crystals, a large fraction of the atoms are located at the crystal surface or near it; relaxation of the surface and interfacial effects distort the atomic positions and decrease the structural order.Crîşmari, DumitruD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 11, Iss 4, Pp 354-360 (2012)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Crîşmari, Dumitru Phonon transport in amorphous silicon nanowires
description	Among the perspective research directions in modern physics, an important role is played by the investigation of amorphous nanostructures [1-3]. The effect of the drop in lattice thermal conductivity in these compounds can be used in thermoelectric applications [4, 5]. It is difficult both theoretically and practically to make in fact a distinction between truly amorphous solids and crystalline solids if the crystal sizes are very small [6]. Even amorphous materials have a certain short-range order at the atomic length scale due to the nature of chemical bonding. Furthermore, in very small crystals, a large fraction of the atoms are located at the crystal surface or near it; relaxation of the surface and interfacial effects distort the atomic positions and decrease the structural order.
format	article
author	Crîşmari, Dumitru
author_facet	Crîşmari, Dumitru
author_sort	Crîşmari, Dumitru
title	Phonon transport in amorphous silicon nanowires
title_short	Phonon transport in amorphous silicon nanowires
title_full	Phonon transport in amorphous silicon nanowires
title_fullStr	Phonon transport in amorphous silicon nanowires
title_full_unstemmed	Phonon transport in amorphous silicon nanowires
title_sort	phonon transport in amorphous silicon nanowires
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2012
url	https://doaj.org/article/23001895defc474e9b7f7d838ad79ba3
work_keys_str_mv	AT crismaridumitru phonontransportinamorphoussiliconnanowires
_version_	1718419290324992000

Phonon transport in amorphous silicon nanowires

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