Twist-angle engineering of excitonic quantum interference and optical nonlinearities in stacked 2D semiconductors

Twist-angle engineering of excitonic quantum interference and optical nonlinearities in stacked 2D semiconductors

Here, the authors report on the large twist-angle susceptibility of excitons involving upper conduction bands in transition metal dichalcogenide bilayers. These high-lying excitons couple with band-edge excitons, and give rise to nonlinear quantum-optical processes that become tuneable by twisting.

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Detalles Bibliográficos
Autores principales: Kai-Qiang Lin, Paulo E. Faria Junior, Jonas M. Bauer, Bo Peng, Bartomeu Monserrat, Martin Gmitra, Jaroslav Fabian, Sebastian Bange, John M. Lupton
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
Materias:
Science
Q
Acceso en línea:https://doaj.org/article/23328d9a1058407caf25749b692297b1
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