Hybrid Organic-Inorganic Perovskite Memory with Long-Term Stability in Air

Abstract Organic-inorganic perovskite materials have attracted extensive attention for wide range of applications such as solar cells, photo detectors, and memory devices. However, the lack of stability in ambient condition prevented the perovskite materials from applying to practical applications....

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Autores principales:	Bohee Hwang, Jang-Sik Lee
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/2337a27bfc1e4314889f2478fbfa2c80
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id	oai:doaj.org-article:2337a27bfc1e4314889f2478fbfa2c80
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spelling	oai:doaj.org-article:2337a27bfc1e4314889f2478fbfa2c802021-12-02T16:06:23ZHybrid Organic-Inorganic Perovskite Memory with Long-Term Stability in Air10.1038/s41598-017-00778-52045-2322https://doaj.org/article/2337a27bfc1e4314889f2478fbfa2c802017-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-00778-5https://doaj.org/toc/2045-2322Abstract Organic-inorganic perovskite materials have attracted extensive attention for wide range of applications such as solar cells, photo detectors, and memory devices. However, the lack of stability in ambient condition prevented the perovskite materials from applying to practical applications. Here, we demonstrate resistive switching memory devices based on organic-inorganic perovskite (CH3NH3PbI3) that have been passivated using thin metal-oxide-layers. CH3NH3PbI3-based memory devices with a solution-processed ZnO passivation layer retain low-voltage operation and, on/off current ratio for more than 30 days in air. Passivation with atomic-layer-deposited (ALD) AlOx is also demonstrated. The resistive switching memory devices with an ALD AlOx passivation layer maintained reliable resistive switching for 30 d in ambient condition, but devices without the passivation layer degraded rapidly and did not show memory properties after 3 d. These results suggest that encapsulation with thin metal-oxide layers is easy and commercially-viable methods to fabricate practical memory devices, and has potential to realize memory devices with long-term stability and reliable, reproducible programmable memory characteristics.Bohee HwangJang-Sik LeeNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Bohee Hwang Jang-Sik Lee Hybrid Organic-Inorganic Perovskite Memory with Long-Term Stability in Air
description	Abstract Organic-inorganic perovskite materials have attracted extensive attention for wide range of applications such as solar cells, photo detectors, and memory devices. However, the lack of stability in ambient condition prevented the perovskite materials from applying to practical applications. Here, we demonstrate resistive switching memory devices based on organic-inorganic perovskite (CH3NH3PbI3) that have been passivated using thin metal-oxide-layers. CH3NH3PbI3-based memory devices with a solution-processed ZnO passivation layer retain low-voltage operation and, on/off current ratio for more than 30 days in air. Passivation with atomic-layer-deposited (ALD) AlOx is also demonstrated. The resistive switching memory devices with an ALD AlOx passivation layer maintained reliable resistive switching for 30 d in ambient condition, but devices without the passivation layer degraded rapidly and did not show memory properties after 3 d. These results suggest that encapsulation with thin metal-oxide layers is easy and commercially-viable methods to fabricate practical memory devices, and has potential to realize memory devices with long-term stability and reliable, reproducible programmable memory characteristics.
format	article
author	Bohee Hwang Jang-Sik Lee
author_facet	Bohee Hwang Jang-Sik Lee
author_sort	Bohee Hwang
title	Hybrid Organic-Inorganic Perovskite Memory with Long-Term Stability in Air
title_short	Hybrid Organic-Inorganic Perovskite Memory with Long-Term Stability in Air
title_full	Hybrid Organic-Inorganic Perovskite Memory with Long-Term Stability in Air
title_fullStr	Hybrid Organic-Inorganic Perovskite Memory with Long-Term Stability in Air
title_full_unstemmed	Hybrid Organic-Inorganic Perovskite Memory with Long-Term Stability in Air
title_sort	hybrid organic-inorganic perovskite memory with long-term stability in air
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/2337a27bfc1e4314889f2478fbfa2c80
work_keys_str_mv	AT boheehwang hybridorganicinorganicperovskitememorywithlongtermstabilityinair AT jangsiklee hybridorganicinorganicperovskitememorywithlongtermstabilityinair
_version_	1718385011152912384

Hybrid Organic-Inorganic Perovskite Memory with Long-Term Stability in Air

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