Electric field-induced crystallization of ferroelectric hafnium zirconium oxide
Abstract Ferroelectricity in crystalline hafnium oxide thin films is strongly investigated for the application in non-volatile memories, sensors and other applications. Especially for back-end-of-line (BEoL) integration the decrease of crystallization temperature is of major importance. However, an...
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| Autores principales: | , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/240560cdb6e64b16966221ef786dd2c8 |
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| Sumario: | Abstract Ferroelectricity in crystalline hafnium oxide thin films is strongly investigated for the application in non-volatile memories, sensors and other applications. Especially for back-end-of-line (BEoL) integration the decrease of crystallization temperature is of major importance. However, an alternative method for inducing ferroelectricity in amorphous or semi-crystalline hafnium zirconium oxide films is presented here, using the newly discovered effect of electric field-induced crystallization in hafnium oxide films. When applying this method, an outstanding remanent polarization value of 2P $$_{\mathrm{R}}$$ R = 47 $$\upmu$$ μ C/cm $$^{2}$$ 2 is achieved for a 5 nm thin film. Besides the influence of Zr content on the film crystallinity, the reliability of films crystallized with this effect is explored, highlighting the controlled crystallization, excellent endurance and long-term retention. |
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