Electric field-induced crystallization of ferroelectric hafnium zirconium oxide

Abstract Ferroelectricity in crystalline hafnium oxide thin films is strongly investigated for the application in non-volatile memories, sensors and other applications. Especially for back-end-of-line (BEoL) integration the decrease of crystallization temperature is of major importance. However, an...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Maximilian Lederer, Sukhrob Abdulazhanov, Ricardo Olivo, David Lehninger, Thomas Kämpfe, Konrad Seidel, Lukas M. Eng
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/240560cdb6e64b16966221ef786dd2c8
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:240560cdb6e64b16966221ef786dd2c8
record_format	dspace
spelling	oai:doaj.org-article:240560cdb6e64b16966221ef786dd2c82021-11-21T12:23:44ZElectric field-induced crystallization of ferroelectric hafnium zirconium oxide10.1038/s41598-021-01724-22045-2322https://doaj.org/article/240560cdb6e64b16966221ef786dd2c82021-11-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-01724-2https://doaj.org/toc/2045-2322Abstract Ferroelectricity in crystalline hafnium oxide thin films is strongly investigated for the application in non-volatile memories, sensors and other applications. Especially for back-end-of-line (BEoL) integration the decrease of crystallization temperature is of major importance. However, an alternative method for inducing ferroelectricity in amorphous or semi-crystalline hafnium zirconium oxide films is presented here, using the newly discovered effect of electric field-induced crystallization in hafnium oxide films. When applying this method, an outstanding remanent polarization value of 2P $$_{\mathrm{R}}$$ R = 47 $$\upmu$$ μ C/cm $$^{2}$$ 2 is achieved for a 5 nm thin film. Besides the influence of Zr content on the film crystallinity, the reliability of films crystallized with this effect is explored, highlighting the controlled crystallization, excellent endurance and long-term retention.Maximilian LedererSukhrob AbdulazhanovRicardo OlivoDavid LehningerThomas KämpfeKonrad SeidelLukas M. EngNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Maximilian Lederer Sukhrob Abdulazhanov Ricardo Olivo David Lehninger Thomas Kämpfe Konrad Seidel Lukas M. Eng Electric field-induced crystallization of ferroelectric hafnium zirconium oxide
description	Abstract Ferroelectricity in crystalline hafnium oxide thin films is strongly investigated for the application in non-volatile memories, sensors and other applications. Especially for back-end-of-line (BEoL) integration the decrease of crystallization temperature is of major importance. However, an alternative method for inducing ferroelectricity in amorphous or semi-crystalline hafnium zirconium oxide films is presented here, using the newly discovered effect of electric field-induced crystallization in hafnium oxide films. When applying this method, an outstanding remanent polarization value of 2P $$_{\mathrm{R}}$$ R = 47 $$\upmu$$ μ C/cm $$^{2}$$ 2 is achieved for a 5 nm thin film. Besides the influence of Zr content on the film crystallinity, the reliability of films crystallized with this effect is explored, highlighting the controlled crystallization, excellent endurance and long-term retention.
format	article
author	Maximilian Lederer Sukhrob Abdulazhanov Ricardo Olivo David Lehninger Thomas Kämpfe Konrad Seidel Lukas M. Eng
author_facet	Maximilian Lederer Sukhrob Abdulazhanov Ricardo Olivo David Lehninger Thomas Kämpfe Konrad Seidel Lukas M. Eng
author_sort	Maximilian Lederer
title	Electric field-induced crystallization of ferroelectric hafnium zirconium oxide
title_short	Electric field-induced crystallization of ferroelectric hafnium zirconium oxide
title_full	Electric field-induced crystallization of ferroelectric hafnium zirconium oxide
title_fullStr	Electric field-induced crystallization of ferroelectric hafnium zirconium oxide
title_full_unstemmed	Electric field-induced crystallization of ferroelectric hafnium zirconium oxide
title_sort	electric field-induced crystallization of ferroelectric hafnium zirconium oxide
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/240560cdb6e64b16966221ef786dd2c8
work_keys_str_mv	AT maximilianlederer electricfieldinducedcrystallizationofferroelectrichafniumzirconiumoxide AT sukhrobabdulazhanov electricfieldinducedcrystallizationofferroelectrichafniumzirconiumoxide AT ricardoolivo electricfieldinducedcrystallizationofferroelectrichafniumzirconiumoxide AT davidlehninger electricfieldinducedcrystallizationofferroelectrichafniumzirconiumoxide AT thomaskampfe electricfieldinducedcrystallizationofferroelectrichafniumzirconiumoxide AT konradseidel electricfieldinducedcrystallizationofferroelectrichafniumzirconiumoxide AT lukasmeng electricfieldinducedcrystallizationofferroelectrichafniumzirconiumoxide
_version_	1718419052323405824

Electric field-induced crystallization of ferroelectric hafnium zirconium oxide

Ejemplares similares