Węgierek, P., & Pastuszak, J. (2021). Application of Neon Ion Implantation to Generate Intermediate Energy Levels in the Band Gap of Boron-Doped Silicon as a Material for Photovoltaic Cells. MDPI AG.
Chicago Style (17th ed.) CitationWęgierek, Paweł, and Justyna Pastuszak. Application of Neon Ion Implantation to Generate Intermediate Energy Levels in the Band Gap of Boron-Doped Silicon as a Material for Photovoltaic Cells. MDPI AG, 2021.
MLA (8th ed.) CitationWęgierek, Paweł, and Justyna Pastuszak. Application of Neon Ion Implantation to Generate Intermediate Energy Levels in the Band Gap of Boron-Doped Silicon as a Material for Photovoltaic Cells. MDPI AG, 2021.
Warning: These citations may not always be 100% accurate.