Application of Neon Ion Implantation to Generate Intermediate Energy Levels in the Band Gap of Boron-Doped Silicon as a Material for Photovoltaic Cells

The aim of the work is to present the possibility of generating intermediate levels in the band gap of p-type silicon doped with boron by using neon ion implantation in the aspect of improving the efficiency of photovoltaic cells made on its basis. The work contains an analysis of the influence of t...

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Autores principales:	Paweł Węgierek, Justyna Pastuszak
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	intermediate band solar cells ion implantation photovoltaic cells efficiency defects electrical parameters of silicon activation energy Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
Acceso en línea:	https://doaj.org/article/244a5a5f8408405a9186c13d0c03a6e7
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spelling	oai:doaj.org-article:244a5a5f8408405a9186c13d0c03a6e72021-11-25T18:14:58ZApplication of Neon Ion Implantation to Generate Intermediate Energy Levels in the Band Gap of Boron-Doped Silicon as a Material for Photovoltaic Cells10.3390/ma142269501996-1944https://doaj.org/article/244a5a5f8408405a9186c13d0c03a6e72021-11-01T00:00:00Zhttps://www.mdpi.com/1996-1944/14/22/6950https://doaj.org/toc/1996-1944The aim of the work is to present the possibility of generating intermediate levels in the band gap of p-type silicon doped with boron by using neon ion implantation in the aspect of improving the efficiency of photovoltaic cells made on its basis. The work contains an analysis of the influence of the dose of neon ions on the activation energy value of additional energy levels. The article presents the results of measurements of the capacitance and conductance of silicon samples with a resistivity of <i>ρ</i> = 0.4 Ω cm doped with boron, the structure of which was modified in the implantation process with Ne<sup>+</sup> ions with the energy <i>E</i> = 100 keV and three different doses of <i>D</i> = 4.0 × 10<sup>13</sup> cm<sup>−2</sup>, 2.2 × 10<sup>14</sup> cm<sup>−2</sup> and 4.0 × 10<sup>14</sup> cm<sup>−2</sup>, respectively. Activation energies were determined on the basis of Arrhenius curves ln(e<sup>t</sup>(<i>T</i><sub>p</sub>)/<i>T</i><sub>p</sub><sup>2</sup>) = f(1/k<i>T</i><sub>p</sub>), where <i>T</i><sub>p</sub> is in the range from 200 K to 373 K and represents the sample temperature during the measurements, which were carried out for the frequencies <i>f</i><sub>p</sub> in the range from 1 kHz to 10 MHz. In the tested samples, additional energy levels were identified and their position in the semiconductor band gap was determined by estimating the activation energy value. The conducted analysis showed that by introducing appropriate defects in the silicon crystal lattice as a result of neon ion implantation with a specific dose and energy, it is possible to generate additional energy levels ∆<i>E</i> = 0.46 eV in the semiconductor band gap, the presence of which directly affects the efficiency of photovoltaic cells made on the basis of such a modified material.Paweł WęgierekJustyna PastuszakMDPI AGarticleintermediate band solar cellsion implantationphotovoltaic cells efficiencydefectselectrical parameters of siliconactivation energyTechnologyTElectrical engineering. Electronics. Nuclear engineeringTK1-9971Engineering (General). Civil engineering (General)TA1-2040MicroscopyQH201-278.5Descriptive and experimental mechanicsQC120-168.85ENMaterials, Vol 14, Iss 6950, p 6950 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	intermediate band solar cells ion implantation photovoltaic cells efficiency defects electrical parameters of silicon activation energy Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85
spellingShingle	intermediate band solar cells ion implantation photovoltaic cells efficiency defects electrical parameters of silicon activation energy Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 Paweł Węgierek Justyna Pastuszak Application of Neon Ion Implantation to Generate Intermediate Energy Levels in the Band Gap of Boron-Doped Silicon as a Material for Photovoltaic Cells
description	The aim of the work is to present the possibility of generating intermediate levels in the band gap of p-type silicon doped with boron by using neon ion implantation in the aspect of improving the efficiency of photovoltaic cells made on its basis. The work contains an analysis of the influence of the dose of neon ions on the activation energy value of additional energy levels. The article presents the results of measurements of the capacitance and conductance of silicon samples with a resistivity of <i>ρ</i> = 0.4 Ω cm doped with boron, the structure of which was modified in the implantation process with Ne<sup>+</sup> ions with the energy <i>E</i> = 100 keV and three different doses of <i>D</i> = 4.0 × 10<sup>13</sup> cm<sup>−2</sup>, 2.2 × 10<sup>14</sup> cm<sup>−2</sup> and 4.0 × 10<sup>14</sup> cm<sup>−2</sup>, respectively. Activation energies were determined on the basis of Arrhenius curves ln(e<sup>t</sup>(<i>T</i><sub>p</sub>)/<i>T</i><sub>p</sub><sup>2</sup>) = f(1/k<i>T</i><sub>p</sub>), where <i>T</i><sub>p</sub> is in the range from 200 K to 373 K and represents the sample temperature during the measurements, which were carried out for the frequencies <i>f</i><sub>p</sub> in the range from 1 kHz to 10 MHz. In the tested samples, additional energy levels were identified and their position in the semiconductor band gap was determined by estimating the activation energy value. The conducted analysis showed that by introducing appropriate defects in the silicon crystal lattice as a result of neon ion implantation with a specific dose and energy, it is possible to generate additional energy levels ∆<i>E</i> = 0.46 eV in the semiconductor band gap, the presence of which directly affects the efficiency of photovoltaic cells made on the basis of such a modified material.
format	article
author	Paweł Węgierek Justyna Pastuszak
author_facet	Paweł Węgierek Justyna Pastuszak
author_sort	Paweł Węgierek
title	Application of Neon Ion Implantation to Generate Intermediate Energy Levels in the Band Gap of Boron-Doped Silicon as a Material for Photovoltaic Cells
title_short	Application of Neon Ion Implantation to Generate Intermediate Energy Levels in the Band Gap of Boron-Doped Silicon as a Material for Photovoltaic Cells
title_full	Application of Neon Ion Implantation to Generate Intermediate Energy Levels in the Band Gap of Boron-Doped Silicon as a Material for Photovoltaic Cells
title_fullStr	Application of Neon Ion Implantation to Generate Intermediate Energy Levels in the Band Gap of Boron-Doped Silicon as a Material for Photovoltaic Cells
title_full_unstemmed	Application of Neon Ion Implantation to Generate Intermediate Energy Levels in the Band Gap of Boron-Doped Silicon as a Material for Photovoltaic Cells
title_sort	application of neon ion implantation to generate intermediate energy levels in the band gap of boron-doped silicon as a material for photovoltaic cells
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/244a5a5f8408405a9186c13d0c03a6e7
work_keys_str_mv	AT pawełwegierek applicationofneonionimplantationtogenerateintermediateenergylevelsinthebandgapofborondopedsiliconasamaterialforphotovoltaiccells AT justynapastuszak applicationofneonionimplantationtogenerateintermediateenergylevelsinthebandgapofborondopedsiliconasamaterialforphotovoltaiccells
_version_	1718411425460781056

Application of Neon Ion Implantation to Generate Intermediate Energy Levels in the Band Gap of Boron-Doped Silicon as a Material for Photovoltaic Cells

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