Structure and transparent conductive properties of F-doped ZnO(FZO) thin films prepared by reactive magnetron sputtering
F-doped ZnO (FZO) films were prepared by reactive sputtering using Zn/ZnO/ZnF<sub>2</sub> mixture as the target at substrate temperature (<i>T</i><sub>s</sub>) of 150℃ and 300℃ and sputtering atmosphere of Ar+O<sub>2</sub> and Ar+H<sub>2</sub&...
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| Auteurs principaux: | , , , |
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| Format: | article |
| Langue: | ZH |
| Publié: |
Journal of Materials Engineering
2021
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/24e81145d60f4c08a5292206a60fc0d2 |
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