Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography

Abstract GaN nanorods (NRds) with axial InGaN/GaN MQWs insertions are synthesized by an original cost-effective and large-scale nanoimprint-lithography process from an InGaN/GaN MQWs layer grown on c-sapphire substrates. By design, such NRds exhibit a single emission due to the c-axis MQWs. A system...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Geoffrey Avit, Yoann Robin, Yaqiang Liao, Hu Nan, Markus Pristovsek, Hiroshi Amano
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/253098597fe742d18e9f6715bdbd8a1c
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:253098597fe742d18e9f6715bdbd8a1c
record_format	dspace
spelling	oai:doaj.org-article:253098597fe742d18e9f6715bdbd8a1c2021-12-02T14:02:54ZStrain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography10.1038/s41598-021-86139-92045-2322https://doaj.org/article/253098597fe742d18e9f6715bdbd8a1c2021-03-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-86139-9https://doaj.org/toc/2045-2322Abstract GaN nanorods (NRds) with axial InGaN/GaN MQWs insertions are synthesized by an original cost-effective and large-scale nanoimprint-lithography process from an InGaN/GaN MQWs layer grown on c-sapphire substrates. By design, such NRds exhibit a single emission due to the c-axis MQWs. A systematic study of the emission of the NRds by time-resolved luminescence (TR-PL) and power dependence PL shows a diameter-controlled luminescence without significant degradation of the recombination rate thanks to the diameter-controlled strain tuning and QSCE. A blueshift up to 0.26 eV from 2.28 to 2.54 eV (543 nm to 488 nm) is observed for 3.2 nm thick InGaN/GaN QWs with an In composition of 19% when the NRds radius is reduced from 650 to 80 nm. The results are consistent with a 1-D based strain relaxation model. By combining state of the art knowledge of c-axis growth and the strong strain relieving capability of NRds, this process enables multiple and independent single-color emission from a single uniform InGaN/GaN MQWs layer in a single patterning step, then solving color mixing issue in InGaN based nanorods LED devices.Geoffrey AvitYoann RobinYaqiang LiaoHu NanMarkus PristovsekHiroshi AmanoNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Geoffrey Avit Yoann Robin Yaqiang Liao Hu Nan Markus Pristovsek Hiroshi Amano Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography
description	Abstract GaN nanorods (NRds) with axial InGaN/GaN MQWs insertions are synthesized by an original cost-effective and large-scale nanoimprint-lithography process from an InGaN/GaN MQWs layer grown on c-sapphire substrates. By design, such NRds exhibit a single emission due to the c-axis MQWs. A systematic study of the emission of the NRds by time-resolved luminescence (TR-PL) and power dependence PL shows a diameter-controlled luminescence without significant degradation of the recombination rate thanks to the diameter-controlled strain tuning and QSCE. A blueshift up to 0.26 eV from 2.28 to 2.54 eV (543 nm to 488 nm) is observed for 3.2 nm thick InGaN/GaN QWs with an In composition of 19% when the NRds radius is reduced from 650 to 80 nm. The results are consistent with a 1-D based strain relaxation model. By combining state of the art knowledge of c-axis growth and the strong strain relieving capability of NRds, this process enables multiple and independent single-color emission from a single uniform InGaN/GaN MQWs layer in a single patterning step, then solving color mixing issue in InGaN based nanorods LED devices.
format	article
author	Geoffrey Avit Yoann Robin Yaqiang Liao Hu Nan Markus Pristovsek Hiroshi Amano
author_facet	Geoffrey Avit Yoann Robin Yaqiang Liao Hu Nan Markus Pristovsek Hiroshi Amano
author_sort	Geoffrey Avit
title	Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography
title_short	Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography
title_full	Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography
title_fullStr	Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography
title_full_unstemmed	Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography
title_sort	strain-induced yellow to blue emission tailoring of axial ingan/gan quantum wells in gan nanorods synthesized by nanoimprint lithography
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/253098597fe742d18e9f6715bdbd8a1c
work_keys_str_mv	AT geoffreyavit straininducedyellowtoblueemissiontailoringofaxialinganganquantumwellsingannanorodssynthesizedbynanoimprintlithography AT yoannrobin straininducedyellowtoblueemissiontailoringofaxialinganganquantumwellsingannanorodssynthesizedbynanoimprintlithography AT yaqiangliao straininducedyellowtoblueemissiontailoringofaxialinganganquantumwellsingannanorodssynthesizedbynanoimprintlithography AT hunan straininducedyellowtoblueemissiontailoringofaxialinganganquantumwellsingannanorodssynthesizedbynanoimprintlithography AT markuspristovsek straininducedyellowtoblueemissiontailoringofaxialinganganquantumwellsingannanorodssynthesizedbynanoimprintlithography AT hiroshiamano straininducedyellowtoblueemissiontailoringofaxialinganganquantumwellsingannanorodssynthesizedbynanoimprintlithography
_version_	1718392068085121024

Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography

Ejemplares similares