Chemical and kinetic insights into the Thermal Decomposition of an Oxide Layer on Si(111) from Millisecond Photoelectron Spectroscopy

Abstract Despite thermal silicon oxide desorption is a basic operation in semiconductor nanotechnology, its detailed chemical analysis has not been yet realized via time-resolved photoemission. Using an advanced acquisition system and synchrotron radiation, heating schedules with velocities as high...

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Autores principales:	J.-J. Gallet, M. G. Silly, M. El Kazzi, F. Bournel, F. Sirotti, F. Rochet
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/2530f0b9f74b41bfa83d92b439bca64a
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spelling	oai:doaj.org-article:2530f0b9f74b41bfa83d92b439bca64a2021-12-02T11:52:30ZChemical and kinetic insights into the Thermal Decomposition of an Oxide Layer on Si(111) from Millisecond Photoelectron Spectroscopy10.1038/s41598-017-14532-42045-2322https://doaj.org/article/2530f0b9f74b41bfa83d92b439bca64a2017-10-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-14532-4https://doaj.org/toc/2045-2322Abstract Despite thermal silicon oxide desorption is a basic operation in semiconductor nanotechnology, its detailed chemical analysis has not been yet realized via time-resolved photoemission. Using an advanced acquisition system and synchrotron radiation, heating schedules with velocities as high as 100 K.s−1 were implemented and highly resolved Si 2p spectra in the tens of millisecond range were obtained. Starting from a Si(111)-7 × 7 surface oxidized in O2 at room temperature (1.4 monolayer of oxygen), changes in the Si 2p spectral shape enabled a detailed chemical analysis of the oxygen redistribution at the surface and of the nucleation, growth and reconstruction of the clean silicon areas. As desorption is an inhomogeneous surface process, the Avrami formalism was adapted to oxide desorption via an original mathematical analysis. The extracted kinetic parameters (the Avrami exponent equal to ~2, the activation energy of ~4.1 eV and a characteristic frequency) were found remarkably stable within a wide (~110 K) desorption temperature window, showing that the Avrami analysis is robust. Both the chemical and kinetic information collected from this experiment can find useful applications when desorption of the oxide layer is a fundamental step in nanofabrication processes on silicon surfaces.J.-J. GalletM. G. SillyM. El KazziF. BournelF. SirottiF. RochetNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-12 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q J.-J. Gallet M. G. Silly M. El Kazzi F. Bournel F. Sirotti F. Rochet Chemical and kinetic insights into the Thermal Decomposition of an Oxide Layer on Si(111) from Millisecond Photoelectron Spectroscopy
description	Abstract Despite thermal silicon oxide desorption is a basic operation in semiconductor nanotechnology, its detailed chemical analysis has not been yet realized via time-resolved photoemission. Using an advanced acquisition system and synchrotron radiation, heating schedules with velocities as high as 100 K.s−1 were implemented and highly resolved Si 2p spectra in the tens of millisecond range were obtained. Starting from a Si(111)-7 × 7 surface oxidized in O2 at room temperature (1.4 monolayer of oxygen), changes in the Si 2p spectral shape enabled a detailed chemical analysis of the oxygen redistribution at the surface and of the nucleation, growth and reconstruction of the clean silicon areas. As desorption is an inhomogeneous surface process, the Avrami formalism was adapted to oxide desorption via an original mathematical analysis. The extracted kinetic parameters (the Avrami exponent equal to ~2, the activation energy of ~4.1 eV and a characteristic frequency) were found remarkably stable within a wide (~110 K) desorption temperature window, showing that the Avrami analysis is robust. Both the chemical and kinetic information collected from this experiment can find useful applications when desorption of the oxide layer is a fundamental step in nanofabrication processes on silicon surfaces.
format	article
author	J.-J. Gallet M. G. Silly M. El Kazzi F. Bournel F. Sirotti F. Rochet
author_facet	J.-J. Gallet M. G. Silly M. El Kazzi F. Bournel F. Sirotti F. Rochet
author_sort	J.-J. Gallet
title	Chemical and kinetic insights into the Thermal Decomposition of an Oxide Layer on Si(111) from Millisecond Photoelectron Spectroscopy
title_short	Chemical and kinetic insights into the Thermal Decomposition of an Oxide Layer on Si(111) from Millisecond Photoelectron Spectroscopy
title_full	Chemical and kinetic insights into the Thermal Decomposition of an Oxide Layer on Si(111) from Millisecond Photoelectron Spectroscopy
title_fullStr	Chemical and kinetic insights into the Thermal Decomposition of an Oxide Layer on Si(111) from Millisecond Photoelectron Spectroscopy
title_full_unstemmed	Chemical and kinetic insights into the Thermal Decomposition of an Oxide Layer on Si(111) from Millisecond Photoelectron Spectroscopy
title_sort	chemical and kinetic insights into the thermal decomposition of an oxide layer on si(111) from millisecond photoelectron spectroscopy
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/2530f0b9f74b41bfa83d92b439bca64a
work_keys_str_mv	AT jjgallet chemicalandkineticinsightsintothethermaldecompositionofanoxidelayeronsi111frommillisecondphotoelectronspectroscopy AT mgsilly chemicalandkineticinsightsintothethermaldecompositionofanoxidelayeronsi111frommillisecondphotoelectronspectroscopy AT melkazzi chemicalandkineticinsightsintothethermaldecompositionofanoxidelayeronsi111frommillisecondphotoelectronspectroscopy AT fbournel chemicalandkineticinsightsintothethermaldecompositionofanoxidelayeronsi111frommillisecondphotoelectronspectroscopy AT fsirotti chemicalandkineticinsightsintothethermaldecompositionofanoxidelayeronsi111frommillisecondphotoelectronspectroscopy AT frochet chemicalandkineticinsightsintothethermaldecompositionofanoxidelayeronsi111frommillisecondphotoelectronspectroscopy
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Chemical and kinetic insights into the Thermal Decomposition of an Oxide Layer on Si(111) from Millisecond Photoelectron Spectroscopy

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