Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse

Abstract Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of materials. In parallel, strongly correl...

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Autores principales:	Nicoló Oliva, Emanuele Andrea Casu, Chen Yan, Anna Krammer, Teodor Rosca, Arnaud Magrez, Igor Stolichnov, Andreas Schueler, Olivier J. F. Martin, Adrian Mihai Ionescu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/25553cec999049ab81a5d5611f9fe1df
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spelling	oai:doaj.org-article:25553cec999049ab81a5d5611f9fe1df2021-12-02T15:05:28ZVan der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse10.1038/s41598-017-12950-y2045-2322https://doaj.org/article/25553cec999049ab81a5d5611f9fe1df2017-10-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-12950-yhttps://doaj.org/toc/2045-2322Abstract Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of materials. In parallel, strongly correlated functional oxides have emerged, having the ability to show reversible insulator-to-metal (IMT) phase transition by collapsing their electronic bandgap under a certain external stimulus. Here, we report for the first time the electronic and optoelectronic characterization of ultra-thin n-n heterojunctions fabricated using deterministic assembly of multilayer molybdenum disulphide (MoS2) on a phase transition material, vanadium dioxide (VO2). The vdW MoS2/VO2 heterojunction combines the excellent blocking capability of an n-n junction with a high conductivity in on-state, and it can be turned into a Schottky rectifier at high applied voltage or at temperatures higher than 68 °C, exploiting the metal state of VO2. We report tunable diode-like current rectification with a good diode ideality factor of 1.75 and excellent conductance swing of 120 mV/dec. Finally, we demonstrate unique tunable photosensitivity and excellent junction photoresponse in the 500/650 nm wavelength range.Nicoló OlivaEmanuele Andrea CasuChen YanAnna KrammerTeodor RoscaArnaud MagrezIgor StolichnovAndreas SchuelerOlivier J. F. MartinAdrian Mihai IonescuNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Nicoló Oliva Emanuele Andrea Casu Chen Yan Anna Krammer Teodor Rosca Arnaud Magrez Igor Stolichnov Andreas Schueler Olivier J. F. Martin Adrian Mihai Ionescu Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse
description	Abstract Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of materials. In parallel, strongly correlated functional oxides have emerged, having the ability to show reversible insulator-to-metal (IMT) phase transition by collapsing their electronic bandgap under a certain external stimulus. Here, we report for the first time the electronic and optoelectronic characterization of ultra-thin n-n heterojunctions fabricated using deterministic assembly of multilayer molybdenum disulphide (MoS2) on a phase transition material, vanadium dioxide (VO2). The vdW MoS2/VO2 heterojunction combines the excellent blocking capability of an n-n junction with a high conductivity in on-state, and it can be turned into a Schottky rectifier at high applied voltage or at temperatures higher than 68 °C, exploiting the metal state of VO2. We report tunable diode-like current rectification with a good diode ideality factor of 1.75 and excellent conductance swing of 120 mV/dec. Finally, we demonstrate unique tunable photosensitivity and excellent junction photoresponse in the 500/650 nm wavelength range.
format	article
author	Nicoló Oliva Emanuele Andrea Casu Chen Yan Anna Krammer Teodor Rosca Arnaud Magrez Igor Stolichnov Andreas Schueler Olivier J. F. Martin Adrian Mihai Ionescu
author_facet	Nicoló Oliva Emanuele Andrea Casu Chen Yan Anna Krammer Teodor Rosca Arnaud Magrez Igor Stolichnov Andreas Schueler Olivier J. F. Martin Adrian Mihai Ionescu
author_sort	Nicoló Oliva
title	Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse
title_short	Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse
title_full	Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse
title_fullStr	Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse
title_full_unstemmed	Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse
title_sort	van der waals mos2/vo2 heterostructure junction with tunable rectifier behavior and efficient photoresponse
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/25553cec999049ab81a5d5611f9fe1df
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Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse

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