Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides
Atomic defects impact the electronic properties of atomically thin transition metal dichalcogenides (TMDs). Here, the authors locate the mid-gap states originating from single chalcogen-atom vacancies in four representative semiconducting monolayer films, and analyse their implications for the semic...
Guardado en:
| Autores principales: | , , , , , , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2019
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/25555605c5a64a088d898838a920ba5a |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| Sumario: | Atomic defects impact the electronic properties of atomically thin transition metal dichalcogenides (TMDs). Here, the authors locate the mid-gap states originating from single chalcogen-atom vacancies in four representative semiconducting monolayer films, and analyse their implications for the semiconducting properties of atomically thin TMDs through electron tunneling and optical spectroscopy measurements. |
|---|