Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides

Atomic defects impact the electronic properties of atomically thin transition metal dichalcogenides (TMDs). Here, the authors locate the mid-gap states originating from single chalcogen-atom vacancies in four representative semiconducting monolayer films, and analyse their implications for the semic...

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Autores principales:	Tae Young Jeong, Hakseong Kim, Sang-Jun Choi, Kenji Watanabe, Takashi Taniguchi, Ki Ju Yee, Yong-Sung Kim, Suyong Jung
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/25555605c5a64a088d898838a920ba5a
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spelling	oai:doaj.org-article:25555605c5a64a088d898838a920ba5a2021-12-02T17:32:25ZSpectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides10.1038/s41467-019-11751-32041-1723https://doaj.org/article/25555605c5a64a088d898838a920ba5a2019-08-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-11751-3https://doaj.org/toc/2041-1723Atomic defects impact the electronic properties of atomically thin transition metal dichalcogenides (TMDs). Here, the authors locate the mid-gap states originating from single chalcogen-atom vacancies in four representative semiconducting monolayer films, and analyse their implications for the semiconducting properties of atomically thin TMDs through electron tunneling and optical spectroscopy measurements.Tae Young JeongHakseong KimSang-Jun ChoiKenji WatanabeTakashi TaniguchiKi Ju YeeYong-Sung KimSuyong JungNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-10 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Tae Young Jeong Hakseong Kim Sang-Jun Choi Kenji Watanabe Takashi Taniguchi Ki Ju Yee Yong-Sung Kim Suyong Jung Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides
description	Atomic defects impact the electronic properties of atomically thin transition metal dichalcogenides (TMDs). Here, the authors locate the mid-gap states originating from single chalcogen-atom vacancies in four representative semiconducting monolayer films, and analyse their implications for the semiconducting properties of atomically thin TMDs through electron tunneling and optical spectroscopy measurements.
format	article
author	Tae Young Jeong Hakseong Kim Sang-Jun Choi Kenji Watanabe Takashi Taniguchi Ki Ju Yee Yong-Sung Kim Suyong Jung
author_facet	Tae Young Jeong Hakseong Kim Sang-Jun Choi Kenji Watanabe Takashi Taniguchi Ki Ju Yee Yong-Sung Kim Suyong Jung
author_sort	Tae Young Jeong
title	Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides
title_short	Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides
title_full	Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides
title_fullStr	Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides
title_full_unstemmed	Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides
title_sort	spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/25555605c5a64a088d898838a920ba5a
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Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides

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