Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides
Atomic defects impact the electronic properties of atomically thin transition metal dichalcogenides (TMDs). Here, the authors locate the mid-gap states originating from single chalcogen-atom vacancies in four representative semiconducting monolayer films, and analyse their implications for the semic...
Guardado en:
Autores principales: | Tae Young Jeong, Hakseong Kim, Sang-Jun Choi, Kenji Watanabe, Takashi Taniguchi, Ki Ju Yee, Yong-Sung Kim, Suyong Jung |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2019
|
Materias: | |
Acceso en línea: | https://doaj.org/article/25555605c5a64a088d898838a920ba5a |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Direct probing of phonon mode specific electron–phonon scatterings in two-dimensional semiconductor transition metal dichalcogenides
por: Duk Hyun Lee, et al.
Publicado: (2021) -
Topological superconductivity in monolayer transition metal dichalcogenides
por: Yi-Ting Hsu, et al.
Publicado: (2017) -
Enhanced performance of in-plane transition metal dichalcogenides monolayers by configuring local atomic structures
por: Yao Zhou, et al.
Publicado: (2020) -
Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides
por: Sara Barja, et al.
Publicado: (2019) -
Impact of polymorphism on the optoelectronic properties of a low-bandgap semiconducting polymer
por: Mengmeng Li, et al.
Publicado: (2019)