Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer

Abstract Nonvolatile ternary memory devices were fabricated using the composite of polystyrene (PS) and graphene oxide(GO) as active layers, which have an reliable intermediate state. The current-voltage (I-V) curves of the indium tin oxide (ITO)/PS+GO/Al device under the external applied voltages e...

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Autores principales:	Yanmei Sun, Dianzhong Wen, Xuduo Bai, Junguo Lu, Chunpeng Ai
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/25586c1ef75a42aea7b6d130dca25ba4
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spelling	oai:doaj.org-article:25586c1ef75a42aea7b6d130dca25ba42021-12-02T12:32:51ZTernary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer10.1038/s41598-017-04299-z2045-2322https://doaj.org/article/25586c1ef75a42aea7b6d130dca25ba42017-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-04299-zhttps://doaj.org/toc/2045-2322Abstract Nonvolatile ternary memory devices were fabricated using the composite of polystyrene (PS) and graphene oxide(GO) as active layers, which have an reliable intermediate state. The current-voltage (I-V) curves of the indium tin oxide (ITO)/PS+GO/Al device under the external applied voltages exhibited current tri-stability with three conductivity states, which clearly revealed ternary memory performance. Under the stimulus of the external voltage, a stable intermediate conductivity state was observed. In the write-read-erase-read test, the ITO/PS+GO/Al device exhibited rewritable, nonvolatile, ternary memory properties. The resistance as functions of the time indicated that three conductivity states held for 2 × 105 s, suggesting that the good stability of the ITO/PS+GO/Al devices. HRTEM and XPS observation indicated that the Al top electrode reacted with oxygen within in GO.Yanmei SunDianzhong WenXuduo BaiJunguo LuChunpeng AiNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-11 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Yanmei Sun Dianzhong Wen Xuduo Bai Junguo Lu Chunpeng Ai Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer
description	Abstract Nonvolatile ternary memory devices were fabricated using the composite of polystyrene (PS) and graphene oxide(GO) as active layers, which have an reliable intermediate state. The current-voltage (I-V) curves of the indium tin oxide (ITO)/PS+GO/Al device under the external applied voltages exhibited current tri-stability with three conductivity states, which clearly revealed ternary memory performance. Under the stimulus of the external voltage, a stable intermediate conductivity state was observed. In the write-read-erase-read test, the ITO/PS+GO/Al device exhibited rewritable, nonvolatile, ternary memory properties. The resistance as functions of the time indicated that three conductivity states held for 2 × 105 s, suggesting that the good stability of the ITO/PS+GO/Al devices. HRTEM and XPS observation indicated that the Al top electrode reacted with oxygen within in GO.
format	article
author	Yanmei Sun Dianzhong Wen Xuduo Bai Junguo Lu Chunpeng Ai
author_facet	Yanmei Sun Dianzhong Wen Xuduo Bai Junguo Lu Chunpeng Ai
author_sort	Yanmei Sun
title	Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer
title_short	Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer
title_full	Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer
title_fullStr	Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer
title_full_unstemmed	Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer
title_sort	ternary resistance switching memory behavior based on graphene oxide embedded in a polystyrene polymer layer
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/25586c1ef75a42aea7b6d130dca25ba4
work_keys_str_mv	AT yanmeisun ternaryresistanceswitchingmemorybehaviorbasedongrapheneoxideembeddedinapolystyrenepolymerlayer AT dianzhongwen ternaryresistanceswitchingmemorybehaviorbasedongrapheneoxideembeddedinapolystyrenepolymerlayer AT xuduobai ternaryresistanceswitchingmemorybehaviorbasedongrapheneoxideembeddedinapolystyrenepolymerlayer AT junguolu ternaryresistanceswitchingmemorybehaviorbasedongrapheneoxideembeddedinapolystyrenepolymerlayer AT chunpengai ternaryresistanceswitchingmemorybehaviorbasedongrapheneoxideembeddedinapolystyrenepolymerlayer
_version_	1718393907317833728

Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer

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