Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer

Abstract Nonvolatile ternary memory devices were fabricated using the composite of polystyrene (PS) and graphene oxide(GO) as active layers, which have an reliable intermediate state. The current-voltage (I-V) curves of the indium tin oxide (ITO)/PS+GO/Al device under the external applied voltages e...

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Autores principales: Yanmei Sun, Dianzhong Wen, Xuduo Bai, Junguo Lu, Chunpeng Ai
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/25586c1ef75a42aea7b6d130dca25ba4
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