Van der Waals negative capacitance transistors

The adaptation to atomically thin 2D semiconductors and van der Waals layered ferroelectrics can enable negative capacitance transistors with superior performance and bendability. Here, the authors report flexible negative capacitance transistors based on MoS2 and a ferroelectric dielectric CIPS wit...

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Autores principales:	Xiaowei Wang, Peng Yu, Zhendong Lei, Chao Zhu, Xun Cao, Fucai Liu, Lu You, Qingsheng Zeng, Ya Deng, Jiadong Zhou, Qundong Fu, Junling Wang, Yizhong Huang, Zheng Liu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/2595002f975944a99cba9301ecb5fe73
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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spelling	oai:doaj.org-article:2595002f975944a99cba9301ecb5fe732021-12-02T14:38:43ZVan der Waals negative capacitance transistors10.1038/s41467-019-10738-42041-1723https://doaj.org/article/2595002f975944a99cba9301ecb5fe732019-07-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-10738-4https://doaj.org/toc/2041-1723The adaptation to atomically thin 2D semiconductors and van der Waals layered ferroelectrics can enable negative capacitance transistors with superior performance and bendability. Here, the authors report flexible negative capacitance transistors based on MoS2 and a ferroelectric dielectric CIPS with a minimum sub-threshold slope of 28 mV/dec and high gain logic invertors.Xiaowei WangPeng YuZhendong LeiChao ZhuXun CaoFucai LiuLu YouQingsheng ZengYa DengChao ZhuJiadong ZhouQundong FuJunling WangYizhong HuangZheng LiuNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-8 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Xiaowei Wang Peng Yu Zhendong Lei Chao Zhu Xun Cao Fucai Liu Lu You Qingsheng Zeng Ya Deng Chao Zhu Jiadong Zhou Qundong Fu Junling Wang Yizhong Huang Zheng Liu Van der Waals negative capacitance transistors
description	The adaptation to atomically thin 2D semiconductors and van der Waals layered ferroelectrics can enable negative capacitance transistors with superior performance and bendability. Here, the authors report flexible negative capacitance transistors based on MoS2 and a ferroelectric dielectric CIPS with a minimum sub-threshold slope of 28 mV/dec and high gain logic invertors.
format	article
author	Xiaowei Wang Peng Yu Zhendong Lei Chao Zhu Xun Cao Fucai Liu Lu You Qingsheng Zeng Ya Deng Chao Zhu Jiadong Zhou Qundong Fu Junling Wang Yizhong Huang Zheng Liu
author_facet	Xiaowei Wang Peng Yu Zhendong Lei Chao Zhu Xun Cao Fucai Liu Lu You Qingsheng Zeng Ya Deng Chao Zhu Jiadong Zhou Qundong Fu Junling Wang Yizhong Huang Zheng Liu
author_sort	Xiaowei Wang
title	Van der Waals negative capacitance transistors
title_short	Van der Waals negative capacitance transistors
title_full	Van der Waals negative capacitance transistors
title_fullStr	Van der Waals negative capacitance transistors
title_full_unstemmed	Van der Waals negative capacitance transistors
title_sort	van der waals negative capacitance transistors
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/2595002f975944a99cba9301ecb5fe73
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Van der Waals negative capacitance transistors

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