Silicon rich nitride ring resonators for rare – earth doped telecommunications-band amplifiers pumped at the O-band

Abstract Ring resonators on silicon rich nitride for potential use as rare-earth doped amplifiers pumped at 1310 nm with amplification at telecommunications-band are designed and characterized. The ring resonators are fabricated on 300 nm and 400 nm silicon rich nitride films and characterized at bo...

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Autores principales:	P. Xing, G. F. R. Chen, X. Zhao, D. K. T. Ng, M. C. Tan, D. T. H. Tan
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/2598d5ff029b4e11a2679df8b215b8d8
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spelling	oai:doaj.org-article:2598d5ff029b4e11a2679df8b215b8d82021-12-02T12:32:43ZSilicon rich nitride ring resonators for rare – earth doped telecommunications-band amplifiers pumped at the O-band10.1038/s41598-017-09732-x2045-2322https://doaj.org/article/2598d5ff029b4e11a2679df8b215b8d82017-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-09732-xhttps://doaj.org/toc/2045-2322Abstract Ring resonators on silicon rich nitride for potential use as rare-earth doped amplifiers pumped at 1310 nm with amplification at telecommunications-band are designed and characterized. The ring resonators are fabricated on 300 nm and 400 nm silicon rich nitride films and characterized at both 1310 nm and 1550 nm. We demonstrate ring resonators exhibiting similar quality factors exceeding 10,000 simultaneously at 1310 nm and 1550 nm. A Dysprosium-Erbium material system exhibiting photoluminescence at 1510 nm when pumped at 1310 nm is experimentally demonstrated. When used together with Dy-Er co-doped particles, these resonators with similar quality factors at 1310 nm and 1550 nm may be used for O-band pumped amplifiers for the telecommunications-band.P. XingG. F. R. ChenX. ZhaoD. K. T. NgM. C. TanD. T. H. TanNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q P. Xing G. F. R. Chen X. Zhao D. K. T. Ng M. C. Tan D. T. H. Tan Silicon rich nitride ring resonators for rare – earth doped telecommunications-band amplifiers pumped at the O-band
description	Abstract Ring resonators on silicon rich nitride for potential use as rare-earth doped amplifiers pumped at 1310 nm with amplification at telecommunications-band are designed and characterized. The ring resonators are fabricated on 300 nm and 400 nm silicon rich nitride films and characterized at both 1310 nm and 1550 nm. We demonstrate ring resonators exhibiting similar quality factors exceeding 10,000 simultaneously at 1310 nm and 1550 nm. A Dysprosium-Erbium material system exhibiting photoluminescence at 1510 nm when pumped at 1310 nm is experimentally demonstrated. When used together with Dy-Er co-doped particles, these resonators with similar quality factors at 1310 nm and 1550 nm may be used for O-band pumped amplifiers for the telecommunications-band.
format	article
author	P. Xing G. F. R. Chen X. Zhao D. K. T. Ng M. C. Tan D. T. H. Tan
author_facet	P. Xing G. F. R. Chen X. Zhao D. K. T. Ng M. C. Tan D. T. H. Tan
author_sort	P. Xing
title	Silicon rich nitride ring resonators for rare – earth doped telecommunications-band amplifiers pumped at the O-band
title_short	Silicon rich nitride ring resonators for rare – earth doped telecommunications-band amplifiers pumped at the O-band
title_full	Silicon rich nitride ring resonators for rare – earth doped telecommunications-band amplifiers pumped at the O-band
title_fullStr	Silicon rich nitride ring resonators for rare – earth doped telecommunications-band amplifiers pumped at the O-band
title_full_unstemmed	Silicon rich nitride ring resonators for rare – earth doped telecommunications-band amplifiers pumped at the O-band
title_sort	silicon rich nitride ring resonators for rare – earth doped telecommunications-band amplifiers pumped at the o-band
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/2598d5ff029b4e11a2679df8b215b8d8
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Silicon rich nitride ring resonators for rare – earth doped telecommunications-band amplifiers pumped at the O-band

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