Quantifying the role of surface plasmon excitation and hot carrier transport in plasmonic devices

Understanding the role of plasmon excitation is crucial for the realization of hot carrier devices. Here, the authors report internal quantum efficiency measurements in photoexcited gold gallium nitride Schottky diodes and elucidate the roles of surface plasmon excitation, hot carrier transport, and...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Giulia Tagliabue, Adam S. Jermyn, Ravishankar Sundararaman, Alex J. Welch, Joseph S. DuChene, Ragip Pala, Artur R. Davoyan, Prineha Narang, Harry A. Atwater
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2018
Materias:
Q
Acceso en línea:https://doaj.org/article/25d5054f02ad43f8926b19d8aa3fa41e
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
Descripción
Sumario:Understanding the role of plasmon excitation is crucial for the realization of hot carrier devices. Here, the authors report internal quantum efficiency measurements in photoexcited gold gallium nitride Schottky diodes and elucidate the roles of surface plasmon excitation, hot carrier transport, and carrier injection in device performance.