Quantifying the role of surface plasmon excitation and hot carrier transport in plasmonic devices

Understanding the role of plasmon excitation is crucial for the realization of hot carrier devices. Here, the authors report internal quantum efficiency measurements in photoexcited gold gallium nitride Schottky diodes and elucidate the roles of surface plasmon excitation, hot carrier transport, and...

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Autores principales:	Giulia Tagliabue, Adam S. Jermyn, Ravishankar Sundararaman, Alex J. Welch, Joseph S. DuChene, Ragip Pala, Artur R. Davoyan, Prineha Narang, Harry A. Atwater
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/25d5054f02ad43f8926b19d8aa3fa41e
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spelling	oai:doaj.org-article:25d5054f02ad43f8926b19d8aa3fa41e2021-12-02T15:34:06ZQuantifying the role of surface plasmon excitation and hot carrier transport in plasmonic devices10.1038/s41467-018-05968-x2041-1723https://doaj.org/article/25d5054f02ad43f8926b19d8aa3fa41e2018-08-01T00:00:00Zhttps://doi.org/10.1038/s41467-018-05968-xhttps://doaj.org/toc/2041-1723Understanding the role of plasmon excitation is crucial for the realization of hot carrier devices. Here, the authors report internal quantum efficiency measurements in photoexcited gold gallium nitride Schottky diodes and elucidate the roles of surface plasmon excitation, hot carrier transport, and carrier injection in device performance.Giulia TagliabueAdam S. JermynRavishankar SundararamanAlex J. WelchJoseph S. DuCheneRagip PalaArtur R. DavoyanPrineha NarangHarry A. AtwaterNature PortfolioarticleScienceQENNature Communications, Vol 9, Iss 1, Pp 1-8 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Giulia Tagliabue Adam S. Jermyn Ravishankar Sundararaman Alex J. Welch Joseph S. DuChene Ragip Pala Artur R. Davoyan Prineha Narang Harry A. Atwater Quantifying the role of surface plasmon excitation and hot carrier transport in plasmonic devices
description	Understanding the role of plasmon excitation is crucial for the realization of hot carrier devices. Here, the authors report internal quantum efficiency measurements in photoexcited gold gallium nitride Schottky diodes and elucidate the roles of surface plasmon excitation, hot carrier transport, and carrier injection in device performance.
format	article
author	Giulia Tagliabue Adam S. Jermyn Ravishankar Sundararaman Alex J. Welch Joseph S. DuChene Ragip Pala Artur R. Davoyan Prineha Narang Harry A. Atwater
author_facet	Giulia Tagliabue Adam S. Jermyn Ravishankar Sundararaman Alex J. Welch Joseph S. DuChene Ragip Pala Artur R. Davoyan Prineha Narang Harry A. Atwater
author_sort	Giulia Tagliabue
title	Quantifying the role of surface plasmon excitation and hot carrier transport in plasmonic devices
title_short	Quantifying the role of surface plasmon excitation and hot carrier transport in plasmonic devices
title_full	Quantifying the role of surface plasmon excitation and hot carrier transport in plasmonic devices
title_fullStr	Quantifying the role of surface plasmon excitation and hot carrier transport in plasmonic devices
title_full_unstemmed	Quantifying the role of surface plasmon excitation and hot carrier transport in plasmonic devices
title_sort	quantifying the role of surface plasmon excitation and hot carrier transport in plasmonic devices
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/25d5054f02ad43f8926b19d8aa3fa41e
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Quantifying the role of surface plasmon excitation and hot carrier transport in plasmonic devices

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