ZnO/CdS/CuGaSe2 solar cells – absorber and device properties
For solar cells based on CuGaSe2 (CGSe) polycrystalline thin films, a novel chemical close-spaced vapor transport technique is used to deposit CGSe absorber. Film characterisation including X-ray diffraction measurements, scanning electron microscopy observations, X-ray fluorescence and elastic r...
Guardado en:
| Autor principal: | |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2006
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/2609d2fbfecd4e86bbb27db180cf9087 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| Sumario: | For solar cells based on CuGaSe2 (CGSe) polycrystalline thin films, a novel chemical
close-spaced vapor transport technique is used to deposit CGSe absorber. Film characterisation including X-ray diffraction measurements, scanning electron microscopy observations,
X-ray fluorescence and elastic recoil detection analysis has been carried out. Optical measurements were performed to monitor the changes in the CGSe band gap as a function of composition. These results are used for a discussion of the behaviour of the ZnO/CdS/CuGaSe2
solar cell photovoltaic parameters as well as of the current transport. For the first time, a
thermally activated Shockley-Read-Hall recombination mechanism is observed for the CGSe-
based solar cells in a large temperature region. |
|---|