ZnO/CdS/CuGaSe2 solar cells – absorber and device properties
For solar cells based on CuGaSe2 (CGSe) polycrystalline thin films, a novel chemical close-spaced vapor transport technique is used to deposit CGSe absorber. Film characterisation including X-ray diffraction measurements, scanning electron microscopy observations, X-ray fluorescence and elastic r...
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| Format: | article |
| Langue: | EN |
| Publié: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2006
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| Accès en ligne: | https://doaj.org/article/2609d2fbfecd4e86bbb27db180cf9087 |
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| Résumé: | For solar cells based on CuGaSe2 (CGSe) polycrystalline thin films, a novel chemical
close-spaced vapor transport technique is used to deposit CGSe absorber. Film characterisation including X-ray diffraction measurements, scanning electron microscopy observations,
X-ray fluorescence and elastic recoil detection analysis has been carried out. Optical measurements were performed to monitor the changes in the CGSe band gap as a function of composition. These results are used for a discussion of the behaviour of the ZnO/CdS/CuGaSe2
solar cell photovoltaic parameters as well as of the current transport. For the first time, a
thermally activated Shockley-Read-Hall recombination mechanism is observed for the CGSe-
based solar cells in a large temperature region. |
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