ZnO/CdS/CuGaSe2 solar cells – absorber and device properties

For solar cells based on CuGaSe2 (CGSe) polycrystalline thin films, a novel chemical close-spaced vapor transport technique is used to deposit CGSe absorber. Film characterisation including X-ray diffraction measurements, scanning electron microscopy observations, X-ray fluorescence and elastic r...

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Autor principal:	Rusu, Marin
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2006
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/2609d2fbfecd4e86bbb27db180cf9087
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spelling	oai:doaj.org-article:2609d2fbfecd4e86bbb27db180cf90872021-11-21T12:09:33ZZnO/CdS/CuGaSe2 solar cells – absorber and device properties 2537-63651810-648Xhttps://doaj.org/article/2609d2fbfecd4e86bbb27db180cf90872006-04-01T00:00:00Zhttps://mjps.nanotech.md/archive/2006/article/3479https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365For solar cells based on CuGaSe2 (CGSe) polycrystalline thin films, a novel chemical close-spaced vapor transport technique is used to deposit CGSe absorber. Film characterisation including X-ray diffraction measurements, scanning electron microscopy observations, X-ray fluorescence and elastic recoil detection analysis has been carried out. Optical measurements were performed to monitor the changes in the CGSe band gap as a function of composition. These results are used for a discussion of the behaviour of the ZnO/CdS/CuGaSe2 solar cell photovoltaic parameters as well as of the current transport. For the first time, a thermally activated Shockley-Read-Hall recombination mechanism is observed for the CGSe- based solar cells in a large temperature region. Rusu, MarinD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 5, Iss 2, Pp 176-188 (2006)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Rusu, Marin ZnO/CdS/CuGaSe2 solar cells – absorber and device properties
description	For solar cells based on CuGaSe2 (CGSe) polycrystalline thin films, a novel chemical close-spaced vapor transport technique is used to deposit CGSe absorber. Film characterisation including X-ray diffraction measurements, scanning electron microscopy observations, X-ray fluorescence and elastic recoil detection analysis has been carried out. Optical measurements were performed to monitor the changes in the CGSe band gap as a function of composition. These results are used for a discussion of the behaviour of the ZnO/CdS/CuGaSe2 solar cell photovoltaic parameters as well as of the current transport. For the first time, a thermally activated Shockley-Read-Hall recombination mechanism is observed for the CGSe- based solar cells in a large temperature region.
format	article
author	Rusu, Marin
author_facet	Rusu, Marin
author_sort	Rusu, Marin
title	ZnO/CdS/CuGaSe2 solar cells – absorber and device properties
title_short	ZnO/CdS/CuGaSe2 solar cells – absorber and device properties
title_full	ZnO/CdS/CuGaSe2 solar cells – absorber and device properties
title_fullStr	ZnO/CdS/CuGaSe2 solar cells – absorber and device properties
title_full_unstemmed	ZnO/CdS/CuGaSe2 solar cells – absorber and device properties
title_sort	zno/cds/cugase2 solar cells – absorber and device properties
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2006
url	https://doaj.org/article/2609d2fbfecd4e86bbb27db180cf9087
work_keys_str_mv	AT rusumarin znocdscugase2solarcellsabsorberanddeviceproperties
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ZnO/CdS/CuGaSe2 solar cells – absorber and device properties

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