Resistive switching studies in VO2 thin films

Abstract The hysteretic insulator-to-metal transition of VO2 is studied in detail for pulsed laser deposition grown thin films on TiO2 substrates, under variation of temperature and applied bias currents. This system is of interest for novel electronics based on memristive concepts, in particular as...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Abhimanyu Rana, Chuan Li, Gertjan Koster, Hans Hilgenkamp
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/26147a34f3054c96bd3b8058fdff81da
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:26147a34f3054c96bd3b8058fdff81da
record_format	dspace
spelling	oai:doaj.org-article:26147a34f3054c96bd3b8058fdff81da2021-12-02T16:23:09ZResistive switching studies in VO2 thin films10.1038/s41598-020-60373-z2045-2322https://doaj.org/article/26147a34f3054c96bd3b8058fdff81da2020-02-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-60373-zhttps://doaj.org/toc/2045-2322Abstract The hysteretic insulator-to-metal transition of VO2 is studied in detail for pulsed laser deposition grown thin films on TiO2 substrates, under variation of temperature and applied bias currents. This system is of interest for novel electronics based on memristive concepts, in particular as the resistive transition in these films occurs close to room temperature. Multiple, stable resistance states can be set controllably in the temperature range of the hysteretic phase transition by tailored temperature sweeps or by Joule heating induced by current pulses.Abhimanyu RanaChuan LiGertjan KosterHans HilgenkampNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 10, Iss 1, Pp 1-6 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Abhimanyu Rana Chuan Li Gertjan Koster Hans Hilgenkamp Resistive switching studies in VO2 thin films
description	Abstract The hysteretic insulator-to-metal transition of VO2 is studied in detail for pulsed laser deposition grown thin films on TiO2 substrates, under variation of temperature and applied bias currents. This system is of interest for novel electronics based on memristive concepts, in particular as the resistive transition in these films occurs close to room temperature. Multiple, stable resistance states can be set controllably in the temperature range of the hysteretic phase transition by tailored temperature sweeps or by Joule heating induced by current pulses.
format	article
author	Abhimanyu Rana Chuan Li Gertjan Koster Hans Hilgenkamp
author_facet	Abhimanyu Rana Chuan Li Gertjan Koster Hans Hilgenkamp
author_sort	Abhimanyu Rana
title	Resistive switching studies in VO2 thin films
title_short	Resistive switching studies in VO2 thin films
title_full	Resistive switching studies in VO2 thin films
title_fullStr	Resistive switching studies in VO2 thin films
title_full_unstemmed	Resistive switching studies in VO2 thin films
title_sort	resistive switching studies in vo2 thin films
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/26147a34f3054c96bd3b8058fdff81da
work_keys_str_mv	AT abhimanyurana resistiveswitchingstudiesinvo2thinfilms AT chuanli resistiveswitchingstudiesinvo2thinfilms AT gertjankoster resistiveswitchingstudiesinvo2thinfilms AT hanshilgenkamp resistiveswitchingstudiesinvo2thinfilms
_version_	1718384158836785152

Resistive switching studies in VO2 thin films

Ejemplares similares