Resistive switching studies in VO2 thin films
Abstract The hysteretic insulator-to-metal transition of VO2 is studied in detail for pulsed laser deposition grown thin films on TiO2 substrates, under variation of temperature and applied bias currents. This system is of interest for novel electronics based on memristive concepts, in particular as...
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| Autores principales: | , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2020
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/26147a34f3054c96bd3b8058fdff81da |
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