Resistive switching studies in VO2 thin films

Abstract The hysteretic insulator-to-metal transition of VO2 is studied in detail for pulsed laser deposition grown thin films on TiO2 substrates, under variation of temperature and applied bias currents. This system is of interest for novel electronics based on memristive concepts, in particular as...

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Autores principales: Abhimanyu Rana, Chuan Li, Gertjan Koster, Hans Hilgenkamp
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
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Acceso en línea:https://doaj.org/article/26147a34f3054c96bd3b8058fdff81da
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