Crystallization of ZnO thin films via thermal dissipation annealing method for high-performance UV photodetector with ultrahigh response speed

Abstract ZnO-based ultraviolet (UV) photodetector can be easily fabricated by using sol–gel spin-coating method, however, the crystallization of amorphous state ZnO thin films is necessary to fabricate high performance UV photodetector. Thus, we devised a thermal dissipation annealing (TDA) method i...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Dongwan Kim, Jae-Young Leem
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/263d641cc17b4e548e86e978012e9dcf
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:263d641cc17b4e548e86e978012e9dcf
record_format	dspace
spelling	oai:doaj.org-article:263d641cc17b4e548e86e978012e9dcf2021-12-02T14:12:45ZCrystallization of ZnO thin films via thermal dissipation annealing method for high-performance UV photodetector with ultrahigh response speed10.1038/s41598-020-79849-z2045-2322https://doaj.org/article/263d641cc17b4e548e86e978012e9dcf2021-01-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-79849-zhttps://doaj.org/toc/2045-2322Abstract ZnO-based ultraviolet (UV) photodetector can be easily fabricated by using sol–gel spin-coating method, however, the crystallization of amorphous state ZnO thin films is necessary to fabricate high performance UV photodetector. Thus, we devised a thermal dissipation annealing (TDA) method in which the heat transfer to the ZnO thin films can be synchronized with the heat release from the substrate. It was found that sol–gel spin-coated ZnO thin films can be crystallized through the mobility difference of ZnO molecules placed at the surface of ZnO thin films. Also, UV photodetector based on ZnO thin films annealed with the TDA method exhibited faster rise and decay time constant (τr = 35 ms and τd = 73 ms, respectively), a higher on/off current ratio, and reproducible photocurrent characteristics compared to that of the ZnO thin films annealed by using furnace and IR lamp. Therefore, these results indicated that the TDA method is a feasible alternative route for the fabrication of ZnO based high performance optoelectronic devices.Dongwan KimJae-Young LeemNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Dongwan Kim Jae-Young Leem Crystallization of ZnO thin films via thermal dissipation annealing method for high-performance UV photodetector with ultrahigh response speed
description	Abstract ZnO-based ultraviolet (UV) photodetector can be easily fabricated by using sol–gel spin-coating method, however, the crystallization of amorphous state ZnO thin films is necessary to fabricate high performance UV photodetector. Thus, we devised a thermal dissipation annealing (TDA) method in which the heat transfer to the ZnO thin films can be synchronized with the heat release from the substrate. It was found that sol–gel spin-coated ZnO thin films can be crystallized through the mobility difference of ZnO molecules placed at the surface of ZnO thin films. Also, UV photodetector based on ZnO thin films annealed with the TDA method exhibited faster rise and decay time constant (τr = 35 ms and τd = 73 ms, respectively), a higher on/off current ratio, and reproducible photocurrent characteristics compared to that of the ZnO thin films annealed by using furnace and IR lamp. Therefore, these results indicated that the TDA method is a feasible alternative route for the fabrication of ZnO based high performance optoelectronic devices.
format	article
author	Dongwan Kim Jae-Young Leem
author_facet	Dongwan Kim Jae-Young Leem
author_sort	Dongwan Kim
title	Crystallization of ZnO thin films via thermal dissipation annealing method for high-performance UV photodetector with ultrahigh response speed
title_short	Crystallization of ZnO thin films via thermal dissipation annealing method for high-performance UV photodetector with ultrahigh response speed
title_full	Crystallization of ZnO thin films via thermal dissipation annealing method for high-performance UV photodetector with ultrahigh response speed
title_fullStr	Crystallization of ZnO thin films via thermal dissipation annealing method for high-performance UV photodetector with ultrahigh response speed
title_full_unstemmed	Crystallization of ZnO thin films via thermal dissipation annealing method for high-performance UV photodetector with ultrahigh response speed
title_sort	crystallization of zno thin films via thermal dissipation annealing method for high-performance uv photodetector with ultrahigh response speed
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/263d641cc17b4e548e86e978012e9dcf
work_keys_str_mv	AT dongwankim crystallizationofznothinfilmsviathermaldissipationannealingmethodforhighperformanceuvphotodetectorwithultrahighresponsespeed AT jaeyoungleem crystallizationofznothinfilmsviathermaldissipationannealingmethodforhighperformanceuvphotodetectorwithultrahighresponsespeed
_version_	1718391775176949760

Crystallization of ZnO thin films via thermal dissipation annealing method for high-performance UV photodetector with ultrahigh response speed

Ejemplares similares