Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils

Abstract GaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient solid-state light sources capable of replacing conventional incandescent and fluorescent lamps. However, their applications are limited to small devices because their fabrication process is expensive as it...

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Autores principales:	Hyeryun Kim, Jitsuo Ohta, Kohei Ueno, Atsushi Kobayashi, Mari Morita, Yuki Tokumoto, Hiroshi Fujioka
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/267aaead976f4c12aadc73da38b1db37
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spelling	oai:doaj.org-article:267aaead976f4c12aadc73da38b1db372021-12-02T15:05:41ZFabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils10.1038/s41598-017-02431-72045-2322https://doaj.org/article/267aaead976f4c12aadc73da38b1db372017-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-02431-7https://doaj.org/toc/2045-2322Abstract GaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient solid-state light sources capable of replacing conventional incandescent and fluorescent lamps. However, their applications are limited to small devices because their fabrication process is expensive as it involves epitaxial growth of GaN by metal-organic chemical vapor deposition (MOCVD) on single crystalline sapphire wafers. If a low-cost epitaxial growth process such as sputtering on a metal foil can be used, it will be possible to fabricate large-area and flexible GaN-based light-emitting displays. Here we report preparation of GaN films on nearly lattice-matched flexible Hf foils using pulsed sputtering deposition (PSD) and demonstrate feasibility of fabricating full-color GaN-based LEDs. It was found that introduction of low-temperature (LT) grown layers suppressed the interfacial reaction between GaN and Hf, allowing the growth of high-quality GaN films on Hf foils. We fabricated blue, green, and red LEDs on Hf foils and confirmed their normal operation. The present results indicate that GaN films on Hf foils have potential applications in fabrication of future large-area flexible GaN-based optoelectronics.Hyeryun KimJitsuo OhtaKohei UenoAtsushi KobayashiMari MoritaYuki TokumotoHiroshi FujiokaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-5 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Hyeryun Kim Jitsuo Ohta Kohei Ueno Atsushi Kobayashi Mari Morita Yuki Tokumoto Hiroshi Fujioka Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils
description	Abstract GaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient solid-state light sources capable of replacing conventional incandescent and fluorescent lamps. However, their applications are limited to small devices because their fabrication process is expensive as it involves epitaxial growth of GaN by metal-organic chemical vapor deposition (MOCVD) on single crystalline sapphire wafers. If a low-cost epitaxial growth process such as sputtering on a metal foil can be used, it will be possible to fabricate large-area and flexible GaN-based light-emitting displays. Here we report preparation of GaN films on nearly lattice-matched flexible Hf foils using pulsed sputtering deposition (PSD) and demonstrate feasibility of fabricating full-color GaN-based LEDs. It was found that introduction of low-temperature (LT) grown layers suppressed the interfacial reaction between GaN and Hf, allowing the growth of high-quality GaN films on Hf foils. We fabricated blue, green, and red LEDs on Hf foils and confirmed their normal operation. The present results indicate that GaN films on Hf foils have potential applications in fabrication of future large-area flexible GaN-based optoelectronics.
format	article
author	Hyeryun Kim Jitsuo Ohta Kohei Ueno Atsushi Kobayashi Mari Morita Yuki Tokumoto Hiroshi Fujioka
author_facet	Hyeryun Kim Jitsuo Ohta Kohei Ueno Atsushi Kobayashi Mari Morita Yuki Tokumoto Hiroshi Fujioka
author_sort	Hyeryun Kim
title	Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils
title_short	Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils
title_full	Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils
title_fullStr	Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils
title_full_unstemmed	Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils
title_sort	fabrication of full-color gan-based light-emitting diodes on nearly lattice-matched flexible metal foils
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/267aaead976f4c12aadc73da38b1db37
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Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils

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