One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors

Abstract In this study, we fabricated a 2 × 2 one-transistor static random-access memory (1T-SRAM) cell array comprising single-gated feedback field-effect transistors and examined their operation and memory characteristics. The individual 1T-SRAM cell had a retention time of over 900 s, nondestruct...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Sangik Choi, Jaemin Son, Kyoungah Cho, Sangsig Kim
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/26b62931187143f5b144a07ceb0940bb
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:26b62931187143f5b144a07ceb0940bb
record_format	dspace
spelling	oai:doaj.org-article:26b62931187143f5b144a07ceb0940bb2021-12-02T17:19:15ZOne-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors10.1038/s41598-021-97479-x2045-2322https://doaj.org/article/26b62931187143f5b144a07ceb0940bb2021-09-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-97479-xhttps://doaj.org/toc/2045-2322Abstract In this study, we fabricated a 2 × 2 one-transistor static random-access memory (1T-SRAM) cell array comprising single-gated feedback field-effect transistors and examined their operation and memory characteristics. The individual 1T-SRAM cell had a retention time of over 900 s, nondestructive reading characteristics of 10,000 s, and an endurance of 108 cycles. The standby power of the individual 1T-SRAM cell was estimated to be 0.7 pW for holding the “0” state and 6 nW for holding the “1” state. For a selected cell in the 2 × 2 1T-SRAM cell array, nondestructive reading of the memory was conducted without any disturbance in the half-selected cells. This immunity to disturbances validated the reliability of the 1T-SRAM cell array.Sangik ChoiJaemin SonKyoungah ChoSangsig KimNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Sangik Choi Jaemin Son Kyoungah Cho Sangsig Kim One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors
description	Abstract In this study, we fabricated a 2 × 2 one-transistor static random-access memory (1T-SRAM) cell array comprising single-gated feedback field-effect transistors and examined their operation and memory characteristics. The individual 1T-SRAM cell had a retention time of over 900 s, nondestructive reading characteristics of 10,000 s, and an endurance of 108 cycles. The standby power of the individual 1T-SRAM cell was estimated to be 0.7 pW for holding the “0” state and 6 nW for holding the “1” state. For a selected cell in the 2 × 2 1T-SRAM cell array, nondestructive reading of the memory was conducted without any disturbance in the half-selected cells. This immunity to disturbances validated the reliability of the 1T-SRAM cell array.
format	article
author	Sangik Choi Jaemin Son Kyoungah Cho Sangsig Kim
author_facet	Sangik Choi Jaemin Son Kyoungah Cho Sangsig Kim
author_sort	Sangik Choi
title	One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors
title_short	One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors
title_full	One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors
title_fullStr	One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors
title_full_unstemmed	One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors
title_sort	one-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/26b62931187143f5b144a07ceb0940bb
work_keys_str_mv	AT sangikchoi onetransistorstaticrandomaccessmemorycellarraycomprisingsinglegatedfeedbackfieldeffecttransistors AT jaeminson onetransistorstaticrandomaccessmemorycellarraycomprisingsinglegatedfeedbackfieldeffecttransistors AT kyoungahcho onetransistorstaticrandomaccessmemorycellarraycomprisingsinglegatedfeedbackfieldeffecttransistors AT sangsigkim onetransistorstaticrandomaccessmemorycellarraycomprisingsinglegatedfeedbackfieldeffecttransistors
_version_	1718381015731273728

One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors

Ejemplares similares