One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors
Abstract In this study, we fabricated a 2 × 2 one-transistor static random-access memory (1T-SRAM) cell array comprising single-gated feedback field-effect transistors and examined their operation and memory characteristics. The individual 1T-SRAM cell had a retention time of over 900 s, nondestruct...
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| Auteurs principaux: | , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2021
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/26b62931187143f5b144a07ceb0940bb |
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