One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors
Abstract In this study, we fabricated a 2 × 2 one-transistor static random-access memory (1T-SRAM) cell array comprising single-gated feedback field-effect transistors and examined their operation and memory characteristics. The individual 1T-SRAM cell had a retention time of over 900 s, nondestruct...
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Auteurs principaux: | , , , |
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Format: | article |
Langue: | EN |
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Nature Portfolio
2021
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Accès en ligne: | https://doaj.org/article/26b62931187143f5b144a07ceb0940bb |
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