One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors

Abstract In this study, we fabricated a 2 × 2 one-transistor static random-access memory (1T-SRAM) cell array comprising single-gated feedback field-effect transistors and examined their operation and memory characteristics. The individual 1T-SRAM cell had a retention time of over 900 s, nondestruct...

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Détails bibliographiques
Auteurs principaux: Sangik Choi, Jaemin Son, Kyoungah Cho, Sangsig Kim
Format: article
Langue:EN
Publié: Nature Portfolio 2021
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R
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Accès en ligne:https://doaj.org/article/26b62931187143f5b144a07ceb0940bb
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