Silicon carbide formation from methane and silicon monoxide

Abstract Silicon carbide (SiC) formation plays an important role during the production of elemental silicon. SiC forms through a high temperature reaction between silicon monoxide gas (SiO) and carbon. Currently, the carbon sources are solids, however finding a way of substituting the solid carbon w...

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Autores principales:	Trygve Storm Aarnæs, Eli Ringdalen, Merete Tangstad
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/27400fcc302047acbfd8f99037ce48c9
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id	oai:doaj.org-article:27400fcc302047acbfd8f99037ce48c9
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spelling	oai:doaj.org-article:27400fcc302047acbfd8f99037ce48c92021-12-02T15:11:50ZSilicon carbide formation from methane and silicon monoxide10.1038/s41598-020-79006-62045-2322https://doaj.org/article/27400fcc302047acbfd8f99037ce48c92020-12-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-79006-6https://doaj.org/toc/2045-2322Abstract Silicon carbide (SiC) formation plays an important role during the production of elemental silicon. SiC forms through a high temperature reaction between silicon monoxide gas (SiO) and carbon. Currently, the carbon sources are solids, however finding a way of substituting the solid carbon with methane could have several advantages. SiC formation was studied in argon, hydrogen and methane containing atmospheres at 1650 °C and 1750 °C. SiO gas was generated from pellets of a 1:2 molar ratio of SiC and silica (SiO2). The reactions were investigated through CO off-gas analysis in conjunction with measuring the weight change. After each experiment, the reaction products were examined in a scanning electron microscope with secondary electrons and through energy-dispersive X-ray spectroscopy. It was confirmed that SiC may form from SiO and methane. Increasing the methane content to 5% caused a significant increase in SiC formation. Furthermore, the SiC structure was also highly sensitive to the methane content that was used. In addition, the SiO producing reaction was affected by hydrogen. The hydrogen lead to an increased rate of SiO formation relative to what was seen in argon. The effect of hydrogen was most pronounced at 1750 °C which is right after the melting of silica.Trygve Storm AarnæsEli RingdalenMerete TangstadNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 10, Iss 1, Pp 1-11 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Trygve Storm Aarnæs Eli Ringdalen Merete Tangstad Silicon carbide formation from methane and silicon monoxide
description	Abstract Silicon carbide (SiC) formation plays an important role during the production of elemental silicon. SiC forms through a high temperature reaction between silicon monoxide gas (SiO) and carbon. Currently, the carbon sources are solids, however finding a way of substituting the solid carbon with methane could have several advantages. SiC formation was studied in argon, hydrogen and methane containing atmospheres at 1650 °C and 1750 °C. SiO gas was generated from pellets of a 1:2 molar ratio of SiC and silica (SiO2). The reactions were investigated through CO off-gas analysis in conjunction with measuring the weight change. After each experiment, the reaction products were examined in a scanning electron microscope with secondary electrons and through energy-dispersive X-ray spectroscopy. It was confirmed that SiC may form from SiO and methane. Increasing the methane content to 5% caused a significant increase in SiC formation. Furthermore, the SiC structure was also highly sensitive to the methane content that was used. In addition, the SiO producing reaction was affected by hydrogen. The hydrogen lead to an increased rate of SiO formation relative to what was seen in argon. The effect of hydrogen was most pronounced at 1750 °C which is right after the melting of silica.
format	article
author	Trygve Storm Aarnæs Eli Ringdalen Merete Tangstad
author_facet	Trygve Storm Aarnæs Eli Ringdalen Merete Tangstad
author_sort	Trygve Storm Aarnæs
title	Silicon carbide formation from methane and silicon monoxide
title_short	Silicon carbide formation from methane and silicon monoxide
title_full	Silicon carbide formation from methane and silicon monoxide
title_fullStr	Silicon carbide formation from methane and silicon monoxide
title_full_unstemmed	Silicon carbide formation from methane and silicon monoxide
title_sort	silicon carbide formation from methane and silicon monoxide
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/27400fcc302047acbfd8f99037ce48c9
work_keys_str_mv	AT trygvestormaarnæs siliconcarbideformationfrommethaneandsiliconmonoxide AT eliringdalen siliconcarbideformationfrommethaneandsiliconmonoxide AT meretetangstad siliconcarbideformationfrommethaneandsiliconmonoxide
_version_	1718387618864955392

Silicon carbide formation from methane and silicon monoxide

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