A comparative study of plasmonic effects in electrochemically nanostructured cuins2 and cugas2 crystals

We investigate the differences in electrochemical anostructuring of CuInS2 and CuGaS2 crystals. It is shown that thermal reatment of CuInS2 crystals either in vacuum or in Zn vapors is a procedure providing necessary electrical conductivity to the as-grown high-resistivity crystals for a consequent...

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Autor principal: Ursachi, Veaceslav
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Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2014
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spelling oai:doaj.org-article:27a83ddb183e49efb700f888b4b681a02021-11-21T11:59:21ZA comparative study of plasmonic effects in electrochemically nanostructured cuins2 and cugas2 crystals538.9+539.2+544.1642537-63651810-648Xhttps://doaj.org/article/27a83ddb183e49efb700f888b4b681a02014-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2014/article/36711https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365We investigate the differences in electrochemical anostructuring of CuInS2 and CuGaS2 crystals. It is shown that thermal reatment of CuInS2 crystals either in vacuum or in Zn vapors is a procedure providing necessary electrical conductivity to the as-grown high-resistivity crystals for a consequent electrochemical nanostructuring, while in CuGaS2 crystals treatment in Zn vapors at temperatures higher than 700 oC is needed to make them suitable for electrochemical nanostructuring. Porous CuInS2 structures with a uniform porosity and the pore diameter controlled by the crystal conductivity are demonstrated, while the porosity of CuGaS2 structures is inhomogeneous. Possibilities of luminescence enhancement via thin Au and Cu film deposition onto nanostructured CuGaS2 surfaces or ITO films onto CuInS2 surfaces are also investigated.Ursachi, VeaceslavD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 13, Iss 1-2, Pp 30-37 (2014)
institution DOAJ
collection DOAJ
language EN
topic Physics
QC1-999
Electronics
TK7800-8360
spellingShingle Physics
QC1-999
Electronics
TK7800-8360
Ursachi, Veaceslav
A comparative study of plasmonic effects in electrochemically nanostructured cuins2 and cugas2 crystals
description We investigate the differences in electrochemical anostructuring of CuInS2 and CuGaS2 crystals. It is shown that thermal reatment of CuInS2 crystals either in vacuum or in Zn vapors is a procedure providing necessary electrical conductivity to the as-grown high-resistivity crystals for a consequent electrochemical nanostructuring, while in CuGaS2 crystals treatment in Zn vapors at temperatures higher than 700 oC is needed to make them suitable for electrochemical nanostructuring. Porous CuInS2 structures with a uniform porosity and the pore diameter controlled by the crystal conductivity are demonstrated, while the porosity of CuGaS2 structures is inhomogeneous. Possibilities of luminescence enhancement via thin Au and Cu film deposition onto nanostructured CuGaS2 surfaces or ITO films onto CuInS2 surfaces are also investigated.
format article
author Ursachi, Veaceslav
author_facet Ursachi, Veaceslav
author_sort Ursachi, Veaceslav
title A comparative study of plasmonic effects in electrochemically nanostructured cuins2 and cugas2 crystals
title_short A comparative study of plasmonic effects in electrochemically nanostructured cuins2 and cugas2 crystals
title_full A comparative study of plasmonic effects in electrochemically nanostructured cuins2 and cugas2 crystals
title_fullStr A comparative study of plasmonic effects in electrochemically nanostructured cuins2 and cugas2 crystals
title_full_unstemmed A comparative study of plasmonic effects in electrochemically nanostructured cuins2 and cugas2 crystals
title_sort comparative study of plasmonic effects in electrochemically nanostructured cuins2 and cugas2 crystals
publisher D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate 2014
url https://doaj.org/article/27a83ddb183e49efb700f888b4b681a0
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