Ferroelectrics Based on HfO<sub>2</sub> Film
The discovery of ferroelectricity in HfO<sub>2</sub> thin film, which is compatible with the CMOS process, has revived interest in ferroelectric memory devices. HfO<sub>2</sub> has been found to exhibit high ferroelectricity at a few nanometers thickness, and studies have rap...
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| Auteurs principaux: | , |
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| Format: | article |
| Langue: | EN |
| Publié: |
MDPI AG
2021
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| Accès en ligne: | https://doaj.org/article/28340562a012470a9a5e88e61c54f820 |
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| Résumé: | The discovery of ferroelectricity in HfO<sub>2</sub> thin film, which is compatible with the CMOS process, has revived interest in ferroelectric memory devices. HfO<sub>2</sub> has been found to exhibit high ferroelectricity at a few nanometers thickness, and studies have rapidly progressed in the past decade. Ferroelectricity can be induced in HfO<sub>2</sub> by various deposition methods and heat treatment processes. By combining ferroelectric materials with field-effect transistors, devices that combine logic and memory functions can be implemented. Ferroelectric HfO<sub>2</sub>-based devices show high potential, but there are some challenges to overcome in endurance and characterization. In this paper, we discuss the fabrication and characteristics of ferroelectric HfO<sub>2</sub> film and various applications, including negative capacitance (NC)), Ferroelectric random-access memory (FeRAM), Ferroelectric tunnel junction (FTJ), and Ferroelectric Field-effect Transistor (FeFET). |
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