Ferroelectrics Based on HfO2 Film

The discovery of ferroelectricity in HfO2 thin film, which is compatible with the CMOS process, has revived interest in ferroelectric memory devices. HfO2 has been found to exhibit high ferroelectricity at a few nanometers thickness, and studies have rap...

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Autores principales:	Chong-Myeong Song, Hyuk-Jun Kwon
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	ferroelectrics hafnium oxide negative capacitance NVM Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/28340562a012470a9a5e88e61c54f820
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id	oai:doaj.org-article:28340562a012470a9a5e88e61c54f820
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spelling	oai:doaj.org-article:28340562a012470a9a5e88e61c54f8202021-11-25T17:24:25ZFerroelectrics Based on HfO<sub>2</sub> Film10.3390/electronics102227592079-9292https://doaj.org/article/28340562a012470a9a5e88e61c54f8202021-11-01T00:00:00Zhttps://www.mdpi.com/2079-9292/10/22/2759https://doaj.org/toc/2079-9292The discovery of ferroelectricity in HfO<sub>2</sub> thin film, which is compatible with the CMOS process, has revived interest in ferroelectric memory devices. HfO<sub>2</sub> has been found to exhibit high ferroelectricity at a few nanometers thickness, and studies have rapidly progressed in the past decade. Ferroelectricity can be induced in HfO<sub>2</sub> by various deposition methods and heat treatment processes. By combining ferroelectric materials with field-effect transistors, devices that combine logic and memory functions can be implemented. Ferroelectric HfO<sub>2</sub>-based devices show high potential, but there are some challenges to overcome in endurance and characterization. In this paper, we discuss the fabrication and characteristics of ferroelectric HfO<sub>2</sub> film and various applications, including negative capacitance (NC)), Ferroelectric random-access memory (FeRAM), Ferroelectric tunnel junction (FTJ), and Ferroelectric Field-effect Transistor (FeFET).Chong-Myeong SongHyuk-Jun KwonMDPI AGarticleferroelectricshafnium oxidenegative capacitanceNVMElectronicsTK7800-8360ENElectronics, Vol 10, Iss 2759, p 2759 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	ferroelectrics hafnium oxide negative capacitance NVM Electronics TK7800-8360
spellingShingle	ferroelectrics hafnium oxide negative capacitance NVM Electronics TK7800-8360 Chong-Myeong Song Hyuk-Jun Kwon Ferroelectrics Based on HfO<sub>2</sub> Film
description	The discovery of ferroelectricity in HfO<sub>2</sub> thin film, which is compatible with the CMOS process, has revived interest in ferroelectric memory devices. HfO<sub>2</sub> has been found to exhibit high ferroelectricity at a few nanometers thickness, and studies have rapidly progressed in the past decade. Ferroelectricity can be induced in HfO<sub>2</sub> by various deposition methods and heat treatment processes. By combining ferroelectric materials with field-effect transistors, devices that combine logic and memory functions can be implemented. Ferroelectric HfO<sub>2</sub>-based devices show high potential, but there are some challenges to overcome in endurance and characterization. In this paper, we discuss the fabrication and characteristics of ferroelectric HfO<sub>2</sub> film and various applications, including negative capacitance (NC)), Ferroelectric random-access memory (FeRAM), Ferroelectric tunnel junction (FTJ), and Ferroelectric Field-effect Transistor (FeFET).
format	article
author	Chong-Myeong Song Hyuk-Jun Kwon
author_facet	Chong-Myeong Song Hyuk-Jun Kwon
author_sort	Chong-Myeong Song
title	Ferroelectrics Based on HfO<sub>2</sub> Film
title_short	Ferroelectrics Based on HfO<sub>2</sub> Film
title_full	Ferroelectrics Based on HfO<sub>2</sub> Film
title_fullStr	Ferroelectrics Based on HfO<sub>2</sub> Film
title_full_unstemmed	Ferroelectrics Based on HfO<sub>2</sub> Film
title_sort	ferroelectrics based on hfo<sub>2</sub> film
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/28340562a012470a9a5e88e61c54f820
work_keys_str_mv	AT chongmyeongsong ferroelectricsbasedonhfosub2subfilm AT hyukjunkwon ferroelectricsbasedonhfosub2subfilm
_version_	1718412397581959168

Ferroelectrics Based on HfO<sub>2</sub> Film

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